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Vanadate for measuring dislocation density and etching process of doped monocrystal

A technique for density determination, vanadate, used in single crystal growth, single crystal growth, chemical instruments and methods, etc.

Inactive Publication Date: 2002-08-28
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no literature report on the measurement of dislocation density of vanadate and doped single crystal

Method used

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  • Vanadate for measuring dislocation density and etching process of doped monocrystal
  • Vanadate for measuring dislocation density and etching process of doped monocrystal
  • Vanadate for measuring dislocation density and etching process of doped monocrystal

Examples

Experimental program
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Effect test

example 1

[0014] Example 1: The polished Nd:GdVO 4 Put the crystal into the etching solution. The composition of the etching solution is 20ml of concentrated phosphoric acid + 1ml of hydrofluoric acid. Etch at 160°C for 6 minutes. Rinse the etched crystal in clean water, dry it with alcohol cotton, and then examine it under a polarizing microscope. Under the observation, square cone-shaped corrosion pits can be seen on the (001) plane, and the field of view area is calculated with a micrometer, and the dislocation density is calculated. See figure 1 .

example 2

[0015] Example 2: The polished Nd: YVO 4 Put the crystal into the etching solution. The composition of the etching solution is 20ml concentrated phosphoric acid + 1.5ml hydrofluoric acid. Etch at 170°C for 6 minutes. Rinse the etched crystal in clean water and dry it with alcohol cotton, and then examine it under a polarizing microscope. Under the observation, the rectangular cone-shaped corrosion pit can be seen on the (100) plane, and the field of view area is calculated with a micrometer, and the dislocation density is calculated. See figure 2 .

example 3

[0016] Example 3: The polished Nd: YVO 4 Put the crystal into the etching solution, the composition of which is 20ml concentrated phosphoric acid + 2ml hydrofluoric acid, etch at 170°C for 7 minutes, rinse the etched crystal in clean water, dry it with alcohol cotton, and then examine it under a polarizing microscope Observation shows that rectangular conical corrosion pits can be seen on the (100) plane, and the field of view area is calculated with a micrometer, and the dislocation density is calculated. See image 3 .

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Abstract

An etching process for vanadate and doped monocrystal used to measure dislocation density includes polishing the vanadate (yttrium vanadate or gadolinium vanadate) and doped rare-earth monocrystal, then immersing in etching liquid containing concentrated phosphoric acid and hydrofluoric acid in vol ratio of 100 (0-10) at 60-180 deg.c for 1-30 min, flushing, drying by rubbing, observing dislocation etched pit, and measuring and testing. It can be used for judging the quality of crystal.

Description

1. Technical field [0001] The invention relates to an etching method for vanadate and doped single crystal used for measuring dislocation density and belongs to the technical field of single crystal growth. 2. Background technology [0002] Yttrium vanadate single crystal has high birefringence and high resistance to strong light damage threshold, and is the best material for optical fiber wavelength splitters. Gadolinium vanadate and yttrium vanadate have the same structure type and similar physical properties. The two laser crystals doped with rare earth (neodymium, thulium, erbium, etc.) ions are the preferred materials for laser diode pumping, among which Nd: YVO 4 Has been widely used. However, the detection of the quality of these two crystals is still stuck in the aspects of appearance inspection (no bubbles, clear growth ridges, and no twinning grains) and observation of scattering particles (no scattering particles visible to the naked eye when irradiated with a 0....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C30B33/10H01S3/16
Inventor 臧竞存马会龙
Owner BEIJING UNIV OF TECH
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