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A monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate bonding crystal and preparation method thereof

A technology of potassium titanyl phosphate and pulsed laser, applied in lasers, laser parts, phonon exciters, etc., to achieve the effect of high conversion efficiency, good beam quality and long life

Inactive Publication Date: 2019-01-15
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no 4 A report on the preparation of integrated saturable absorbers by preparing nanoparticles on crystals, and combining them with KTP crystals to form a cemented crystal assembly, and then realizing green pulsed laser output

Method used

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  • A monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate bonding crystal and preparation method thereof
  • A monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate bonding crystal and preparation method thereof
  • A monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate bonding crystal and preparation method thereof

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Embodiment 1

[0038] Such as figure 1 , 2 As shown, the preparation of a monolithic integrated green pulsed laser based on neodymium-doped yttrium vanadate and potassium titanyl phosphate cemented crystals includes the following steps:

[0039] (1) cut Nd:YVO with a 4 Crystal 2 is used as the substrate, and the surface perpendicular to the a-axis of the crystal is polished, and the polished sample is ultrasonically cleaned with 99.7% alcohol to remove impurities on the polished surface to obtain a polished surface;

[0040] (2) Using an ion beam accelerator, silver ions 1 are implanted into the polished surface of the crystal along the direction of the vertical direction of the a-axis beam exit surface at an angle of 7°; the implantation energy is 180 kiloelectron volts (keV), and the implantation dose is 7×10 16 ions / cm 2 ; Make silver ions distributed in the range of 200nm below the crystal surface;

[0041] (3) Perform annealing treatment 3 on the sample implanted with silver ions, fir...

Embodiment 2

[0046] The preparation of a monolithic integrated green pulsed laser based on neodymium-doped yttrium vanadate and potassium titanyl phosphate cemented crystals includes the following steps:

[0047] (1) cut Nd:YVO with a 4 Crystal 2 is used as the substrate, and the surface perpendicular to the a-axis of the crystal is polished, and the polished sample is ultrasonically cleaned with 99.7% alcohol to remove impurities on the polished surface to obtain a polished surface;

[0048] (2) Using an ion beam accelerator, implant silver ions 1 into the crystal polishing surface along the vertical direction of the a-axis beam exit surface or the direction at an angle of 7°; the implantation energy is 120 kiloelectron volts (keV), and the implantation dose is 5×10 16 ions / cm 2 ; Make silver ions distributed in the range of 150nm below the crystal surface;

[0049] (3) Perform annealing treatment 3 on the sample implanted with silver ions, first raise the temperature to 1000° C. for 6 ...

Embodiment 3

[0054] The preparation of a monolithic integrated green pulsed laser based on neodymium-doped yttrium vanadate and potassium titanyl phosphate cemented crystals includes the following steps:

[0055] (1) cut Nd:YVO with a 4 Crystal 2 is used as the substrate, and the surface perpendicular to the a-axis of the crystal is polished, and the polished sample is ultrasonically cleaned with 99.7% alcohol to remove impurities on the polished surface to obtain a polished surface;

[0056] (2) Using an ion beam accelerator, gold ions are implanted into the crystal polishing surface along the vertical direction of the a-axis beam exit surface or the direction at an angle of 7°; the implantation energy is 180 kiloelectron volts (keV), and the implantation dose is 7×10 16 ions / cm 2 ; Make gold ions distributed in the range of 200nm below the crystal surface;

[0057] (3) Perform annealing treatment 3 on the sample implanted with gold ions, first raise the temperature for 6 hours to 1000°...

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Abstract

The invention relates to a monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate gluing crystal and preparation thereof, wherein, the energy-carrying ion beam technology and the plasmon resonance effect are applied, and the injection energy of 100 DEG C and 100 DEG C is used as the injection energy of 100 DEG C and 100 DEG C respectively. A metal nanoparticle-based saturable absorption mirror is integrate into a Nd: YVO4 laser crystal at a dose of (1- 10) * 1016 ion / cm2 for producing a pulsed laser at a wavelength of about 1 micron. The prepared Nd: YVO_4 crystals were bonded or photocolloidally bonded to the KTP crystals which satisfy the phase matching of class II 1064 nm - 532 nm to form a miniaturized integrated device which can generate 532 nm green laser pulses. The invention has the advantages of high conversion efficiency, good beam quality, long service life, convenient use and the like, and can generate green light pulses with high peak power and high brightness, and has important applications in color display, laser processing, laser medical treatment, stylus and the like.

Description

technical field [0001] The present invention relates to Nd:YVO 4 The monolithic integrated green light pulse laser and preparation method of crystal and KTP crystal belong to the technical field of optoelectronic device preparation. Background technique [0002] All-solid-state pulsed laser technology has always been a frontier hotspot in the field of laser research. Common techniques for generating pulsed lasers are mainly classified into Q-switching and mode-locking. Q-switching technology, also known as Q-switching technology, can compress the general output continuous laser into a pulse sequence with narrow width and high energy. Mode-locking technology can realize the phase locking between different laser pulse modes, so as to generate pulses with extremely high peak power, extremely narrow pulse width and high repetition rate. Compared with the active Q-switching / mode-locking technology that requires external modulation devices, the passive Q-switching / mode-locking ...

Claims

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Application Information

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IPC IPC(8): H01S3/098H01S3/11H01S3/109H01S3/16
CPCH01S3/109H01S3/1118H01S3/1611H01S3/1673
Inventor 陈峰李子琦李让逄驰聂伟杰
Owner SHANDONG UNIV
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