Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Raw material synthesis method for growing yttrium vanadate crystal through pulling method

A synthesis method and technology of yttrium vanadate, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as stripes, blackened crystals, and easy cracking of yttrium vanadate crystals, and achieve low energy consumption and low cost. Low, the effect of low production equipment configuration requirements

Active Publication Date: 2010-02-17
保山鑫隆电子科技有限公司
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a raw material synthesis method suitable for growing yttrium vanadate and rare earth ion-doped yttrium vanadate crystals by the pulling method, which is used to solve the problem of easy cracking and cracking of the yttrium vanadate crystals grown by the pulling method. There are problems such as streaks and blackened crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Raw material synthesis method for growing yttrium vanadate crystal through pulling method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Embodiment 1 (liquid phase synthesis of yttrium orthovanadate):

[0046] Y with a purity of 99.99% 2 o 3 Dissolved in concentrated nitric acid to give Y(NO 3 ) 3 solution. Will NH 4 VO 3 (4N) dissolved in ammonia solution to obtain NH 4 VO 3 solution. According to attached figure 1 The method of the synthetic route puts Y(NO 3 ) 3 solution to NH 4 VO 3 Slowly drop into the solution (the molar ratio is 1.02: 1), and the nitrate mixed solution of the additive (additive La 2 o 3 , BaO and CaO account for the product YVO 4 The weight percentages are 0-0.5%, 0-0.1% and 0-0.1%), ammonia water is dropped into the mixed solution, and stirred for a long time so that the pH value is controlled at about 7.2. The above precipitate was aged and suction filtered to obtain a white precipitate, which was taken out and dried, then pressed into tablets, and finally put into a muffle furnace for sintering at 1100°C for 10 hours, and the product was white. Put the white bl...

Embodiment 2

[0047] Embodiment 2 (the liquid phase synthesis of Nd-doped yttrium vanadate):

[0048] Y with a purity of 99.99% 2 o 3 and Nd 2 o 3 (Nd doping concentration is 0.5 mol%) The mixed powder is dissolved in concentrated nitric acid to obtain a nitrate solution. Will NH 4 VO 3 (4N) dissolved in ammonia solution to obtain NH 4 VO 3 solution. According to attached figure 1 The method of the synthetic route converts the mixed solution of nitrate to NH 4 VO 3 ((Y+Nd) and V molar ratio is 1.02: 1) in the solution slowly, drop simultaneously also the nitrate mixed solution of additive (additive La 2 o 3 , BaO and CaO account for the product YVO 4 The weight percentages are 0-0.5%, 0-0.1% and 0-0.1%), ammonia water is dropped into the mixed solution, and stirred for a long time so that the pH value is controlled at 7.2. The above-mentioned precipitate was aged and pumped, and finally a white pure white precipitate was obtained, which was taken out and dried, then pressed in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a raw material synthesis method for growing yttrium vanadate crystal through pulling method and in particular to a preparation method of yttrium vanadate raw material doped with yttrium vanadate and rare earth ions (RE = Nd<3+>, Yb<3+> or Ce<3+>). The method is characterized in that the method comprises the following steps: dissolving ammonium metavanadate (NH4VO3) in aqueous solution of ammonia to obtain ammonium metavanadate solution; dissolving yttrium oxide in nitric acid to obtain yttrium nitrate solution; mixing the two solutions fully, adding proper additive solution, dropwise adding the mixed solution in aqueous solution of ammonia to maintain a certain pH value for the solution and obtain yttrium vanadate precipitate; standing precipitate for some time, washing, filtrating, performing reprecipitation; drying the obtained yttrium vanadate, tabletting and finally sintering the pressed yttrium vanadate at high temperature for some time. The yttrium vanadate raw material obtained by the invention can be used for growing monocrystal through pulling method, the obtained crystal has good quality, no obvious scattering, stripe and dark spot, and the finished product ratio of yttrium vanadate crystal is high.

Description

Technical field: [0001] The invention relates to a raw material synthesis method for growing yttrium vanadate crystals by a pulling method, in particular to a raw material synthesis method for growing yttrium vanadate crystals and rare earth ion-doped yttrium vanadate crystals by a pulling method. Background technique: [0002] Yttrium vanadate (YVO 4 ) crystal is a very good birefringent ferroelectric crystal material, which has a tetragonal structure and properties, and the unit cell parameters are a=b=0.71192nm, c=0.62898nm. YVO 4 The crystal has high temperature stability and good physical and mechanical properties, high birefringence value (Δn=0.21), good light transmission performance, large transparent wavelength range, similar hardness to glass (5mohs), and large optical damage value ( 21-28GW / cm2), can grow single crystal with good optical uniformity and other outstanding advantages. In addition, YVO4 crystal also has the advantages of no cleavage and deliquescen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/30C04B35/495
Inventor 柳祝平裴广庆黄小卫王有明
Owner 保山鑫隆电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com