Multi-layer multi-chip fan-out structure and manufacturing method

A multi-chip and die technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as chip shift and low alignment accuracy, and achieve optimized package size, compact package size, and low price Obvious effect

Active Publication Date: 2014-02-19
江苏中科智芯集成科技有限公司
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the deficiencies in the prior art, to provide a multi-layer multi-chip fan-out structure and a manufa

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-layer multi-chip fan-out structure and manufacturing method
  • Multi-layer multi-chip fan-out structure and manufacturing method
  • Multi-layer multi-chip fan-out structure and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0042] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0043] Such as Picture 11 Shown:

[0044] A multi-layer and multi-chip fan-out structure includes a carrier board 101 on which a plurality of stacked package sub-bodies are arranged; each package sub-body is encapsulated with at least one die 201; in each package sub-body One or more die 201 is covered by the dielectric material of the dielectric layer 103, and the die 201 is mounted on the metal pad 102 in a face-up manner; the dielectric layer 103 of each package sub-body is provided There is an RDL layer 104; the pad on the front side of the die 201 is electrically connected to the RDL layer 104 of the package sub-body where the die 201 is located through the first interconnection hole 202'.

[0045] An insulating layer 105 is provided between adjacent package sub-bodies, and the RDL layers 104 of adjacent package sub-bodies are electrically connected through th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a multi-layer multi-chip fan-out structure. The multi-layer multi-chip fan-out structure comprises a bearing plate, and a plurality of packaging sub bodies which are stacked are arranged on the bearing plate; at least one die is packaged into each packaging sub body; in each packaging sub body, the die is coated by a dielectric material of a dielectric layer, and the die is attached to a metal cushion block with the front face faces upwards; an RDL layer is arranged on the dielectric layer of each packaging sub body; a bonding pad of the front face of each die is electrically connected with the RDL layer of the corresponding packaging sub body where the die exists; insulating layers are arranged between adjacent packaging sub bodies, and the RDL layers of the adjacent packaging sub bodies are electrically connected through second interconnection holes between the layers. The metal cushion blocks in the bottom packaging sub bodies are pressed on the surface of the bearing plate, and the metal cushion blocks in the middle or top packaging sub bodies are pressed on the insulating layers of the packaging sub bodies; the surface of each top packaging sub body is provided with a solder mask layer in a distributed mode. According to the multi-layer multi-chip fan-out structure, three-dimensional multi-chip stacking can be easily achieved.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to a stacked chip fan-out structure and a manufacturing method. Background technique [0002] Today's electronic packaging must not only provide protection for the chip, but also meet the ever-increasing requirements for performance, reliability, heat dissipation, and power distribution at a certain cost. The increase in the speed and processing capacity of functional chips requires more pins , faster clock frequency and better power distribution. At the same time, due to the increasing demand of users for ultra-thin, miniaturized, multi-functional, high-performance and low-power intelligent mobile electronic products, it directly promotes the integration of mobile terminal chip computing and communication functions, and the integration level and complexity are increasing. The higher the power consumption and the lower the cost trend. [0003] Traditional packaging techniq...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/525H01L23/31H01L21/60H01L21/50
CPCH01L24/19H01L24/82H01L2224/12105H01L2224/19H01L2224/24H01L2224/24226H01L2224/32225H01L2224/32245H01L2224/73267H01L2224/8203H01L2224/92244H01L2924/181H01L2924/00H01L2924/00012
Inventor 张文奇王磊于中尧郭学平
Owner 江苏中科智芯集成科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products