A heterojunction solar cell with interfacial delta doping
A solar cell and heterojunction technology, which is applied in the field of solar cells, can solve the problems of hindering the transport of minority carriers in the battery, reducing the performance of the battery, and hindering the transport of electrons, so as to improve the process of transport limitation, enhance transport, Choose an effect with great flexibility
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Embodiment 1
[0016] Such as image 3 As shown, taking a single-junction solar cell as an example, it includes a GaAs (gallium arsenide) buffer layer 1, an AlGaInP back field 2, a GaInP active layer 3, a GaInP emitter region 4, an AlInP window layer 5, and a GaAs cap layer 6. The structure was grown on an n-type GaAs substrate using a low-pressure metal-organic chemical vapor deposition (MOCVD) device, with delta doping during the growth of the window layer. The thickness of the emitting region is 50nm; the thickness of the window layer is 30nm; the doping surface density of delta doping is 10 12 cm -2 .
Embodiment 2
[0018] Taking a single-junction solar cell as an example, it includes a GaAs buffer layer 1, an AlGaInP back field 2, a GaInP active layer 3, a GaInP emission region 4, an AlGaInP window layer 5, and a GaAs cap layer 6. The structure is grown on an n-type GaAs substrate using low-pressure metal-organic chemical vapor deposition equipment, and delta doping is performed when growing the window layer. The thickness of the emitting region is 80nm; the thickness of the window layer is 50nm; the doping surface density of delta doping is 10 13 cm -2 .
[0019] The heterojunction solar cell containing interface δ-doping provided by the present invention, in order to enhance the transport of carriers, starting from the aspect of reducing the heterojunction barrier between the window layer and the emission region, the window layer is δ-doped . Delta doping can introduce positive or negative charges near the interface, which can create a potential discontinuity at the interface. The ...
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