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Ge-doped silicon substrate, its preparation method and solar cell comprising it

A technology for solar cells and silicon substrates, applied in the field of solar cells, can solve problems such as high cost, segregation, and less available polysilicon, and achieve the effect of improving light attenuation and improving problems

Active Publication Date: 2015-12-02
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when using this method, because the segregation coefficient of germanium in silicon is very small (about 0.33), the germanium element in the formed crystalline silicon has serious segregation, and the concentration distribution of germanium element is seriously uneven.
This unevenness causes the resistivity of polysilicon to be uneven, so that the available part of polysilicon is less and the cost is higher.

Method used

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  • Ge-doped silicon substrate, its preparation method and solar cell comprising it
  • Ge-doped silicon substrate, its preparation method and solar cell comprising it

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preparation example Construction

[0031] Those skilled in the art are able to select an appropriate method to obtain a corresponding germanium-doped silicon substrate under the teaching of the above-mentioned germanium-doped silicon substrate structure of the present invention. In a preferred embodiment of the present invention, the preparation method of the germanium-doped silicon substrate includes the following steps: providing a P-type crystalline silicon body 10; performing germanium-doped treatment on the upper surface of the P-type crystalline silicon body 10 to form a first germanium doped region 110 .

[0032] Compared with the method of doping germanium before the crystalline silicon ingot or rod in the prior art, in the preparation method provided by the present invention, the germanium doping treatment is carried out after the crystalline silicon ingot or rod is drawn. Since the segregation coefficient of germanium atoms is too low, only about 0.33, if germanium atoms are directly added to silicon ma...

Embodiment 1

[0052] 2000 P-type crystalline silicon wafers made of texture (the upper surface area of ​​a single wafer is 24336mm 2 , with a mass of 9.86g) placed in a tube in a diffusion furnace so that its upper surface is exposed in the tube. The temperature of the diffusion furnace was raised to 550° C. within 1200 s, and nitrogen gas was introduced during this process to remove the air in the furnace tube. Keep the temperature constant, after 120s of stabilization. Introduce appropriate amount of nitrogen gas into the germane source bottle, and then infiltrate germane (0.15g) into the furnace tube within 20s. Keep the temperature constant, so that the germane decomposition time lasts 900s. Deposit germanium atoms on the upper surface of the silicon wafer; continue to raise the temperature to 750°C, and control the heating time at 600s. Maintain the temperature of 750°C for 1200s to obtain a silicon wafer with the first germanium-doped region; pass phosphorus oxychloride and oxygen ...

Embodiment 2

[0056] 2000 P-type crystalline silicon wafers made of texture (the upper surface area of ​​a single wafer is 24336mm 2 , with a mass of 9.87g) placed in a tube in a diffusion furnace so that its upper surface is exposed in the tube. The temperature of the diffusion furnace was raised to 280°C within 180s, and nitrogen gas was introduced during this process to remove the air in the furnace tube. Keep the temperature constant, after 120s of stabilization. Introduce appropriate amount of nitrogen gas into the germane source bottle, and then infiltrate germane (0.12g) into the furnace tube within 20s. Keep the temperature constant, so that the germane decomposition time lasts 900s. Deposit germanium atoms on the upper surface of the silicon wafer; continue to raise the temperature to 750°C, and control the heating time at 600s. Maintain the temperature of 750°C for 1200s to obtain a silicon wafer with the first germanium-doped region; pass phosphorus oxychloride and oxygen into...

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Abstract

The invention discloses a germanium-doped silicon substrate, a manufacturing method thereof and a solar cell comprising the germanium-doped silicon substrate. The germanium-doped silicon substrate comprises a P-typed crystalline silicon main body. The upper surface of the P-typed crystalline silicon main body is provided with a first germanium-doped area formed by means of germanium doping. The germanium-doped silicon substrate forms a germanium-doped area at least at the upper surface of a silicon substrate. Existence of germanium atoms in the germanium-doped area increases reaction energy barriers of B-O complexes and B-Fe complexes generated by boron and oxygen or impurity iron in the P-typed crystalline silicon main body. Under a condition of illumination, complex reactions of the boron and the oxygen or the impurity iron are more difficult to carry out. According to the method above, optical attenuation problems due to reduction of the boron of the solar cell can be more effectively improved.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a germanium-doped silicon substrate, a preparation method thereof and a solar cell comprising the same. Background technique [0002] In the field of solar cells, crystalline silicon solar cells occupy an important position. Before making crystalline silicon solar cells, it is usually necessary to dope crystalline silicon according to the type of crystalline silicon. When selecting dopants, the primary consideration is the segregation coefficient of doping elements inside crystalline silicon. The closer the segregation coefficient is to 1, the more uniform the distribution concentration of doping elements in the crystallographic direction of crystalline silicon, and the better the electrical performance of the prepared solar cell. In the process of making P-type crystalline silicon, boron element with a segregation coefficient of 0.8 is usually selected for doping. In t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0264H01L31/18
CPCH01L21/02381H01L31/0288H01L31/03529H01L31/1812Y02E10/50Y02P70/50
Inventor 王坤
Owner YINGLI GRP