Chemical vapor deposition equipment, and method used for cleaning crawler belts in chemical vapor deposition

Abstract

The invention relates to chemical vapor deposition equipment, and a method used for cleaning crawler belts in chemical vapor deposition. The chemical vapor deposition equipment comprises a chamber, a gas inlet device used for providing the chamber with gas to be treated; a gas exhausting device used for delivering treated gas out from the chamber, crawler belts used for moving loaded wafers to be treated; a heating block used for heating the wafers to be treated on the crawler belts, a spray device used for spraying gasification corrosive liquid onto the surfaces of the crawler belts, an ultrasonic cleaning device used for cleaning the surfaces of the crawler belts using ultrasonic wave, and a drying device used for drying the surfaces of the crawler belts. The chemical vapor deposition equipment and the method are capable of removing SiO2 accumulated on the crawler belts effectively, solving surface particle problems of the wafers, improving surface quality of the wafers, and increasing service efficiency of the chemical vapor deposition equipment.

Description

technical field [0001] The present invention relates to a chemical vapor deposition (CVD) equipment and a method for cleaning crawlers in the chemical vapor deposition method, in particular, to SiO accumulated on the surface of the crawler in chemical vapor deposition. 2 Cleaning and removal techniques. Background technique [0002] Chemical Vapor Deposition (CVD, Chemical Vapor Deposition) is a process that introduces reactive materials into the reaction chamber, uses energy such as heaters, plasma, and light to chemically react the gas, and forms a stable solid film on the surface of the wafer. In semiconductor production, the CVD process is mainly used to prepare various thin films, pre-doping, etc. [0003] figure 1 is a schematic diagram showing a prior art chemical vapor deposition apparatus. Such as figure 1 As shown, in this chemical vapor phase equipment, by introducing SiH into the cavity 4 and O 2 , so that SiO is deposited on the wafer placed on the track 1...

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Problems solved by technology

[0005] But such prior art has the following problems: (1) when growing SiO 2 During the thin film process, the surface of the track 101 continuously and uniformly accumulates SiO 2 film, after reaching a certain thickness, SiO 2 The film will crack and splash on the wafer and equipment. The surface of the wafer is contaminated with many particles. Scrubbing the wafer with pure water may not completely solve the problem of surface particles; (2) Low efficiency, 40-60 batches of wafers per operation , the equipment will be cleaned

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