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Method for preparing vertical gallium nitride-based light-emitting diode device using silicon substrate

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of cost reduction, complex process of stress regulation structural layer, difficulty in improving material preparation efficiency, etc., to reduce preparation cost and improve The effects of preparation efficiency, good practical value and market promotion prospect

Inactive Publication Date: 2016-03-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The existing method of using a silicon substrate to prepare a vertical GaN-based light-emitting diode device has the following technical problems: (1) The design and preparation of the stress-regulating structural layer is complicated, and it is difficult to improve the material preparation efficiency and reduce the cost
However, due to the above-mentioned technical problems, these GaN-based LED device preparation technologies on Si substrates have not been widely commercialized and promoted so far.

Method used

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  • Method for preparing vertical gallium nitride-based light-emitting diode device using silicon substrate
  • Method for preparing vertical gallium nitride-based light-emitting diode device using silicon substrate
  • Method for preparing vertical gallium nitride-based light-emitting diode device using silicon substrate

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no. 1 example

[0035] see Figure 1A As shown in -E, it is the first embodiment of the present invention. The present invention provides a method for preparing a gallium nitride-based light-emitting diode device with a vertical structure using a silicon substrate, which is characterized in that it includes the following steps:

[0036] Step 1: placing a silicon substrate 101 for support and material growth into the growth chamber of metal organic chemical vapor deposition material growth equipment;

[0037] Step 2: Prepare a barrier layer 201 on the surface of the silicon substrate 101. The barrier layer 201 is made of a material that has a good lattice matching relationship with silicon and gallium nitride, and has a temperature of 800°C to 1200°C The range is composed of materials with good thermal and chemical stability, including but not limited to one or more of aluminum nitride, boron nitride, titanium nitride, zirconium nitride, hafnium nitride, silicon carbide, diamond, and zirconium ...

Embodiment 1

[0055] see Figure 1A -E, the process flow of the present invention using a silicon substrate to prepare a vertical blue gallium nitride-based light-emitting diode device is as follows:

[0056] Step 1: placing a silicon (111) substrate 101 for support and material growth into a growth chamber of metal organic chemical vapor deposition (MOCVD) material growth equipment;

[0057] Step 2: Using a metal organic chemical vapor deposition process, on the surface of the silicon (111) substrate 101, first prepare a high-temperature aluminum nitride barrier layer 201 with a thickness of 5 nm to 500 nm at a preparation growth temperature of 1000 to 1200 ° C;

[0058]Step 3: Prepare a high-temperature thin GaN single crystal template layer 301 with a thickness of 5nm to 500nm on the high-temperature aluminum nitride barrier layer in sequence at a growth temperature of 1000 to 1200°C by metal-organic chemical vapor deposition process, and grow at a temperature of 550°C A thin Indium Gall...

Embodiment 2

[0069] see Figure 2A -E, the present invention utilizes the silicon substrate to prepare the technological process of vertical structure green GaN-based light-emitting diode device as follows:

[0070] Step 1: placing a silicon (111) substrate 101 for support and material growth into a growth chamber of metal organic chemical vapor deposition material growth equipment;

[0071] Step 2: Using a metal organic chemical vapor deposition process, on the surface of the silicon (111) substrate 101, first prepare a zirconium nitride (ZrN) barrier layer 201 with a thickness of 5nm to 500nm at a preparation growth temperature of 550°C to 750°C;

[0072] Step 3: Using a metal organic chemical vapor deposition process, on the zirconium nitride barrier layer, sequentially prepare a low-temperature thin gallium nitride layer 303 with a thickness of 5nm to 500nm at the same growth temperature of 550°C to 750°C, with a thickness of 5nm to 500nm and Thin indium gallium nitride (In x Ga 1-x...

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Abstract

The invention discloses a method for manufacturing gallium-nitride-based light emitting diode devices with vertical structures by the aid of silicon substrates. The method includes manufacturing a barrier layer and a stress regulation structural layer on the surface of a silicon substrate; heating the silicon substrate, heating, decomposing and completely precipitating an indium component in a thin III-group nitride alloy layer with the indium component, and turning a low-temperature thin gallium nitride layer into a high-temperature thin gallium nitride single-crystal mold plate layer; manufacturing a structural layer of a gallium-nitride-based light emitting diode device; cooling the silicon substrate, and automatically separating a porous thin III-group nitride weak bonding layer from the silicon substrate; manufacturing a reflecting / ohmic metal layer; bonding a bonding substrate; stripping the silicon substrate by the aid of mechanical force; manufacturing a first ohmic electrode layer; manufacturing a second ohmic electrode layer; obtaining the gallium-nitride-based light emitting diode device with a vertical structure after dividing, screening and packaging. The stress regulation structural layer comprises the low-temperature thin gallium nitride layer and the thin III-group nitride alloy layer with an indium component.

Description

technical field [0001] The invention relates to the field of semiconductor materials and devices, in particular to a method for preparing a vertical gallium nitride-based light-emitting diode device using a silicon substrate Background technique [0002] Gallium nitride (GaN)-based group III nitrides are the most commonly used semiconductor materials for the development of short-wavelength light-emitting diode devices (LEDs). Due to the difficulty in preparing and expensive homogeneous substrates, GaN single crystal materials and LED device structures The preparation is mainly through the preparation of heterogeneous substrates by heteroepitaxial method. Sapphire (Al 2 o 3 ), silicon carbide (SiC) and silicon (Si) are the three most commonly used substrate materials for the preparation of GaN and GaN-based LED device structural materials. With the continuous growth of demand for long-life, ultra-high-brightness high-power LED devices in many fields such as indoor and outd...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0066H01L33/0093
Inventor 杨少延冯玉霞魏鸿源焦春美赵桂娟汪连山刘祥林王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI