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Method for preparing vertical gallium nitride-based light-emitting diodes using sapphire substrate

A technology for light-emitting diodes and sapphire substrates, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve the problems of high investment in laser equipment that cannot further reduce device costs, damage to the structure of GaN-based LED devices, and difficulty in improving the yield of high-power LED devices and other issues, to achieve good market promotion prospects, good practical value, and improve the effect of preparation quality and efficiency

Inactive Publication Date: 2016-03-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this process of removing the sapphire substrate by laser lift-off also has technical deficiencies: (1) the use of high-power visible light laser equipment to lift off the substrate, the high investment in laser equipment cannot further reduce the cost of the device; (2) the laser-lifted substrate The larger the area, the lower the efficiency and yield; (3) Local heating of high-power lasers will also cause varying degrees of damage to the structure of GaN-based LED devices, making it difficult to improve the yield of high-power LED devices

Method used

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  • Method for preparing vertical gallium nitride-based light-emitting diodes using sapphire substrate
  • Method for preparing vertical gallium nitride-based light-emitting diodes using sapphire substrate
  • Method for preparing vertical gallium nitride-based light-emitting diodes using sapphire substrate

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no. 1 example

[0046] see Figure 1A As shown in -E, it is the first embodiment of the present invention. The process flow of the present invention using a sapphire substrate to prepare a vertical blue gallium nitride (GaN)-based light-emitting diode device is as follows:

[0047] Step 1: placing a c-plane sapphire substrate 101 for support and material growth into a growth chamber of metal organic chemical vapor deposition (MOCVD) material growth equipment;

[0048] Step 2: Prepare a low-temperature thin gallium nitride layer 201 with a thickness of 5 nm to 500 nm on the c-plane sapphire substrate 101 at a low temperature of 550° C. to 850° C. , at a low temperature of 550°C to 850°C, a thin indium gallium nitride (In x Ga 1-x N) alloy layer 202, with In x Ga 1-x N is prepared at the same growth temperature as a low-temperature thin gallium nitride layer 201 with a thickness of 5 nm to 500 nm, thereby obtaining a stress control structure layer 2 with a three-layer structure.

[0049] St...

Embodiment 2

[0059] see Figure 2A As shown in -E, it is the second embodiment of the present invention. The process flow of the present invention using a sapphire substrate to prepare a vertical structure ultraviolet aluminum-gallium-gallium-nitride (AlGaN)-based light-emitting diode device is as follows:

[0060] Step 1: placing a sapphire substrate 101 for support and material growth into a growth chamber of molecular beam epitaxy (MBE) equipment;

[0061] Step 2: Using a molecular beam epitaxy (MBE) process, on the surface of the sapphire substrate 101, at the same growth temperature of 550 to 750 ° C, sequentially prepare 5 to 200 nm thick and indium (In) component concentration x of 0.05 to 0.75 Thin Indium Aluminum Nitride (In x Al 1-x N) alloy layer 202, a low-temperature thin gallium nitride layer 201 with a thickness of 5 to 200 nm, thereby obtaining a stress control structure layer 2 with a two-layer structure.

[0062] Step 3: Raise the heating temperature of the substrate f...

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Abstract

The invention discloses a method for producing a vertical-structured GaN-based light emitting diode by adopting a sapphire substrate. The method includes: firstly producing a stress control layer structure formed by a group III thin nitride alloy layer containing indium compounds and a low-temperature thin gallium nitride layer on the surface of the sapphire substrate; heating the sapphire substrate to high temperature; producing a GaN-based light emitting diode structural layer; cooling to allow for self-detachment at a position of a porous group III thin nitride weak bonding layer; producing a reflection / Ohm metal layer on the GaN-based light emitting diode structural layer; bonding a bonding substrate; stripping to remove the sapphire substrate along the porous group III thin nitride weak bonding layer; producing a first Ohm electrode layer; producing a second Ohm electrode layer; subjecting the above materials to cutting, selecting and packaging to obtain the vertical-structured GaN-based light emitting diode.

Description

technical field [0001] The invention relates to the field of semiconductor materials and devices, in particular to a method for preparing a vertical gallium nitride-based light-emitting diode using a sapphire substrate Background technique [0002] Gallium nitride (GaN) is the most commonly used semiconductor material for the development of short-wavelength light-emitting diode devices (LEDs). Because its homogeneous substrate is difficult to prepare and expensive, the preparation of GaN single crystal materials and LED device structures is mainly through heteroepitaxy The method utilizes heterogeneous substrate preparation. Among them, sapphire (Al 2 o 3 ), silicon carbide (SiC) and silicon (Si) are the three most commonly used substrate materials for GaN and LED device structure materials. With the continuous growth of demand for long-life, ultra-high-brightness high-power LED devices in many fields such as indoor and outdoor general lighting, large-screen outdoor scree...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 杨少延张恒魏鸿源焦春美赵桂娟汪连山刘祥林王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI