A three-dimensional integrated circuit in a planar process and a method for manufacturing the same
A technology of integrated circuits and capacitors, which is applied in the fields of circuits, semiconductor/solid-state device manufacturing, and electrical components, etc. It can solve the problems of inability to achieve overlapping placement, and the inability to achieve overlapping placement of PIP capacitors and high-resistance polysilicon resistors, etc., to reduce the size of the chip Area and cost reduction effects
Active Publication Date: 2014-03-19
WUXI ZGMICRO ELECTRONICS CO LTD
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Problems solved by technology
[0003] If a PIP capacitor is used, it is definitely impossible to overlap the PIP capacitor and the high-resistance polysilicon resistor, because the PIP will use the polysilicon layer of the high-resistance polysilicon at the same time.
Using MOS capacitors, the existing technology cannot achieve overlapping placement
Method used
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[0022] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0023] Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure or characteristic that can be included in at least one implementation of the present invention. "In one embodiment" appearing in different places in this specification does not all refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments. Unless otherwise specified, the words connected, connected, and joined in this document mean that they are electrically connected directly or indirectly.
[0024] Figure 3a and 3b A schematic structural diagram of a three-dimensional integrated circuit 300 using planar integrated circuit technology in the present invention....
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The invention provides a three-dimensional integrated circuit in a planar process and a method for manufacturing the same. The integrated circuit comprises a MOS capacitor formed on a substrate and a polycrystalline silicon resistor formed by a second polycrystalline silicon region over a first polycrystalline silicon region. The MOS capacitor comprises a first polycrystalline silicon region used as a first electrode, an active region and a channel region which are used as a second electrode, and a dielectric region between the first polycrystalline silicon region and the channel region. The first polycrystalline silicon region, the dielectric region, and the channel region successively correspond from top to bottom. The active region is arranged around the channel region. An oxide layer is formed between the second polycrystalline silicon region and the first polycrystalline silicon region. The projection of the second polycrystalline silicon region on the substrate is completely involved in the projection of the first polycrystalline silicon region on the substrate. The second polycrystalline silicon region forming the polycrystalline silicon resistor can be placed over the first polycrystalline silicon region such that the second polycrystalline silicon region shares a chip area occupied by the first polycrystalline silicon region. Therefore, the chip area is decreased and cost is reduced.
Description
【Technical field】 [0001] The invention relates to the field of circuit design, in particular to a three-dimensional integrated circuit under planar technology and a manufacturing method thereof. 【Background technique】 [0002] In analog circuits, larger resistors and capacitors are often required to build RC (resistor-capacitor) filter circuits with larger time constants. For example, in the LED (light-emitting diode) backlight drive circuit, the dimming circuit will use a large RC filter circuit to generate an output voltage proportional to the duty cycle of the PWM (Pulse Width Modulation) dimming signal, such as figure 1 shown. figure 1 Among them, REF is the reference voltage, DPWM is the PWM dimming signal, and VDIM is the output voltage signal. The voltage of VDIM is directly proportional to the duty cycle of DPWM. If VDIM is used as the reference voltage to adjust the LED current signal, the linear control of the LED current by DPWM can be realized, thereby control...
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IPC IPC(8): H01L27/06H01L29/06H01L21/822
Inventor 王钊
Owner WUXI ZGMICRO ELECTRONICS CO LTD