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Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip

A sensor chip, silicon piezoresistive technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, instruments, etc., can solve problems such as small size and reduce chip size volume effect

Inactive Publication Date: 2014-03-26
SHANGHAI TM AUTOMATION INSTR
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  • Abstract
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing an integrated silicon piezoresistive sensor chip, which enables the integrated preparation of the pressure sensor and the acceleration sensor, solves the problem that the pressure source is introduced from the back of the chip, and realizes the accurate measurement of tire pressure and acceleration , to meet the requirements of small size and mass production at low cost

Method used

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  • Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip

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Embodiment

[0035] see figure 1 and figure 2 As shown, this embodiment specifically describes a method for preparing an integrated silicon piezoresistive sensor chip, which includes the following steps:

[0036] 1. Use thermal oxidation to grow silicon dioxide (SiO2) on both sides of a single crystal silicon wafer. 2 ) film layer;

[0037] 2. Perform photolithography in the design area of ​​the silicon wafer square diaphragm 11 and the cantilever beam 17 to form the light boron varistor strip diffusion area;

[0038] 3. Etch the SiO in the diffusion area of ​​the light boron varistor strip 2 film layer;

[0039] 4. Using the diffusion method, the light boron varistor strip 10 is formed;

[0040] 5. Etching off SiO 2 film layer;

[0041] 6. Use thermal oxidation to grow SiO on both sides of the silicon wafer 2 film layer;

[0042] 7. Photolithography is performed on the upper surface of the silicon wafer to form a thick boron resistance ohmic contact area;

[0043] 8. Etch the S...

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Abstract

The invention provides a method for preparing an integrated silicon piezoresistive type sensor chip and a sensor chip prepared according to the method. According to the method, a pressure sensor and an acceleration sensor are integrated on the same surface of monocrystalline silicon in an integration mode, so that the size of the chip is decreased to the greatest extent.

Description

technical field [0001] The invention relates to the technical field of silicon micromachining, and relates to a preparation method of an integrated silicon piezoresistive sensor chip, which can realize precise measurement of absolute pressure and acceleration. Background technique [0002] With the improvement of our country's living standards, the number of cars as a daily means of transportation has increased year by year, and people's awareness of traffic accident prevention has also been continuously improved. According to statistics, 70% of traffic accidents on highways in China are caused by tire blowouts, and tire blowouts are generally caused by the uneven pressure of each tire. Therefore, it is important to realize real-time monitoring of automobile tire pressure. The subject is also a broad market. It has been proved by practice that real-time monitoring of tire pressure can be realized by using the pressure sensor installed on each tire, and an acceleration senso...

Claims

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Application Information

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IPC IPC(8): G01D21/02B81C1/00B81B3/00
Inventor 尤彩虹纪乐春贾新彪
Owner SHANGHAI TM AUTOMATION INSTR
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