High-reliability stackable and high-speed SOI diode

Abstract

The invention relates to a high-reliability stackable and high-speed SOI diode. The high-reliability and stackable high-speed SOI diode comprises an SOI substrate. The high-reliability stackable and high-speed SOI diode is characterized in that the Si layer on the upper portion of the SOI substrate is provided with a first conduction type doping area extending to the SiO2 layer in the middle of the SOI substrate from the upper surface of the SOI substrate; the upper surface of the SOI substrate is provided with a first conduction type epitaxial layer in which an annular groove is formed, the groove extends to the SiO2 layer in the middle of the SOI substrate from the upper surface of the first conduction type epitaxial layer, the groove is filled with polycrystalline silicon, and a first monox layer is arranged between the side wall of the groove and the polycrystalline silicon; second monox layers are respectively arranged on the upper surface of the groove; the parts, on the two sides of the groove of the first conduction type epitaxial layer and the SOI substrate are provided with the first conduction type doping area, and the upper portion of the first conduction type epitaxial layer is provided with a second conduction type doping area. The high-reliability stackable and high-speed SOI diode overcomes the defects of an existing SOI diode in the aspects of frequency and pressure resistance, and the high-reliability and high-speed SOI diode can be achieved.

Description

technical field [0001] The invention relates to a high-reliability stackable high-speed SOI diode, which belongs to the technical field of semiconductors. Background technique [0002] With the development of microelectronic technology, SOI devices are widely used. Due to the advantages of low power consumption, anti-radiation, and anti-latch-up characteristics of SOI technology, SOI technology has gradually become the mainstream technology for manufacturing high-speed, low-power, high-reliability integrated circuits, and the use of SOI diodes is also increasing. more attention. With the use of SOI diodes in fields such as radio frequency and optoelectronics, the structure of conventional SOI diodes has been continuously updated. The SOI diode with the original structure has insufficient withstand voltage level, large dark current, large junction capacitance, long response time, and insufficient sensitivity. How to meet the needs of high-speed and high-reliability diodes i...

AI Technical Summary

Problems solved by technology

The SOI diode with the original structure has insufficient withstand voltage level, large dark current, large junction capacitance, long response time, and insufficient sensitivity. How to meet the needs of high-speed and high-reliability diodes is the consideration of the present invention.

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