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A kind of photoresist wall forming method

A molding method and photoresist technology, applied in optics, components for photomechanical processing, instruments, etc., can solve the problems of photoresist wall delamination, strong water absorption, large thermal expansion coefficient, etc., to reduce delamination and Release, low hygroscopicity, and strength-enhancing effects

Active Publication Date: 2017-01-25
中微智创(北京)软件技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life
At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor

Method used

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  • A kind of photoresist wall forming method
  • A kind of photoresist wall forming method
  • A kind of photoresist wall forming method

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with drawings and embodiments.

[0032] 1. Use injection molding technology to form a flat plate, such as figure 2 As shown, the front of the flat plate has a first boss 1 and a second boss 2, the first boss 1 is grid-like, and each grid has a second boss 2, and the first boss 1 It is separated from the second boss 2 by a groove, and the first boss 1 and the second boss 2 have the same height. The flatness of the surface of the first boss 1 is less than 5 microns. The flat plate can adopt encapsulating resins such as phenolic resin, benzoxazine resin, cyanic acid resin, polyimide, bismaleimide, polyphenylene ether, polyetheretherketone and modified materials thereof. Taking glass fiber-reinforced epoxy resin as an example, the maximum temperature it can withstand after curing exceeds 260 degrees Celsius, which exceeds the maximum temperature of 260 degrees Celsius for image sensor reflow soldering a...

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Abstract

The invention provides a photoresistance wall forming method. The method comprises comprises the following steps: forming a flat plate by using an injection molding technique, wherein a first boss and a second boss with the same height are arranged on the front side of the plate, and the first boss and the second boss are isolated from each other by a groove; gluing the front side of the plate and laminating the plate and a first substrate, and grinding the back side of the plate to be thin till the first boss and the second boss are isolated from the bottom part; radiating by using an ultraviolet lamp so as to eliminate the viscosity of the first substrate; separating the first boss from the first substrate by using a transfer substrate, and bonding the back side of the first boss with the glue through rolling with a second substrate; finally relieving the temporary bonding of the first boss with the transfer substrate so as to form the photoresistance wall structure. The method has the advantages that as the photoresistance wall is independently formed, compared with the conventional photoetching method using photoresist, the method has the advantages that the possibility of unqualified devices caused by pollution in the photoresistance wall forming process is greatly reduced, and due to a material for injection molding, the structural strength of a photomask of the photoresistance wall cover is improved, and the problems of reliability such as layering and dissociation are effectively reduced.

Description

technical field [0001] The invention relates to a method for forming a photoresist wall, which belongs to the technical field of semiconductor manufacturing. Background technique [0002] The photoresist wall photomask currently used in image sensors is made by spin-coating photoresist on a glass wafer, and forming a regularly arranged photoresist wall structure on the photoresist through exposure and development, such as figure 1 shown. The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life. At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor. As image sensors...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/68
Inventor 徐成于大全李昭强
Owner 中微智创(北京)软件技术有限公司
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