High-efficiency PID (Potential Included Degradation) Free solar single crystal silicon cell passivation antireflection film

Abstract

The invention relates to a high-efficiency PID (Potential Included Degradation) Free solar single crystal silicon cell passivation antireflection film. The bottom layer of the passivation antireflection film is an SiO2 layer with the refractive index of 1.45-1.58 and the thickness of 2-30 nm, the middle layer of the passivation antireflection film is a high refractive index passivated SiNx layer with the refractive index of 1.90-2.30 and the thickness of 2-30 nm, and the top layer of the passivation antireflection film is an electrical property optimized SiNx layer with the refractive index of 1.90-2.20 and the thickness of 4-50 nm. The high-efficiency PID Free solar single crystal silicon cell passivation antireflection film can optimize electrical property of a single crystal silicon cell, and also can effectively reduce PID attenuation from the end of the cell, so that the conversion efficiency can be improved by 15%-20%, and the passivation antireflection film has greater economic benefits.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a passivation anti-reflection film for high-efficiency PID Free solar monocrystalline silicon cells. Background technique [0002] At present, as a clean and pollution-free energy source, the research and development of solar cells (photoelectric materials) has entered a new stage. In 2005, Sunpower first discovered the PID (potential induced degradation) effect in solar modules. Under the action of long-term high voltage, there is leakage between the glass and the packaging material in the module, which makes a large amount of charge and Na+ ions enriched on the surface of the cell, causing the surface passivation anti-reflection film to fail first, and then the PN junction to fail, and finally the module Performance is degraded, well below design standards. In 2010, NREL and Solon confirmed that regardless of the technology of P-type crystalline silicon cells used in the components...

AI Technical Summary

Problems solved by technology

From the component side, the main method is to use special glass instead of ordinary soda-lime glass and high-resistivity packaging materials, but this will greatly increase the cost of the component; from the system side, the main method is to ground the component frame, Negative grounding of the DC section of the inverter, etc., but these methods can only slow down the PID decay speed; from the perspective of the battery side, changing the process of passivating the anti-reflection film layer of the battery is one of the main research directions

At present, the SiNx passivation anti-reflection coating on the surface of traditional solar monocrystalline silicon cells is almost always due to the low refractive index, which makes the PID attenuation more serious; or in order to pursue PID Free, the refractive index of the SiNx passivation anti-reflection coating is increased. The conversion efficiency of crystalline silicon cells is reduced by 1-2% compared with conventional processes

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