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A light emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of light-emitting diodes such as the decline in light-emitting efficiency, and achieve the effect of improving light-emitting efficiency

Inactive Publication Date: 2016-09-28
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light emitting diode and its manufacturing method, which is used to solve the problem in the prior art that the light extraction efficiency of the light emitting diode decreases due to the absorption of light by the P electrode

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  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method

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Embodiment 1

[0053] Such as Figure 4~Figure 11 As shown, the present embodiment provides a method for manufacturing a light emitting diode, and the method for manufacturing at least includes the following steps:

[0054] Such as Figure 4~Figure 5As shown, step 1) is firstly performed, providing a semiconductor substrate 101 , and sequentially depositing a light-emitting epitaxial structure at least including an N-type layer 102 , a quantum well layer 103 and a P-type layer 104 on the surface of the semiconductor substrate 101 .

[0055] The semiconductor substrate 101 is a Si substrate, a SiC substrate, an AsGa substrate, a sapphire substrate, etc. In this embodiment, the semiconductor substrate 101 is a sapphire substrate. The N-type layer 102 is N-GaN layer, N-GaP layer, etc., the quantum well layer 103 is InGaN layer, AlInGaP layer, etc., and the P-type layer 104 is P-GaN layer, P-GaP layer, etc. In this embodiment, the N-type layer 102 is an N-GaN layer, the quantum well layer 103 ...

Embodiment 2

[0074] Such as Figure 11 As shown, the present invention also provides a light emitting diode, comprising at least:

[0075] A semiconductor substrate 101, the lower surface of which is combined with a back-plated reflective layer 111;

[0076] A light-emitting epitaxial structure, at least including an N-type layer 102, a quantum well layer 103, and a P-type layer 104 sequentially stacked on the surface of the semiconductor substrate 101, and the surface of the N-type layer 102 has an N-electrode 110 preparation region 106;

[0077] The transparent conductive layer 105 is combined with the surface of the P-type layer 104 and has an etching window 107;

[0078] a mirror 108, filling the etching window 107;

[0079] The P electrode 109 covers the surface of the reflector and forms an ohmic contact with the transparent conductive layer 105;

[0080] The N electrode 110 is prepared in the preparation region 106 of the N electrode 110 .

[0081] The semiconductor substrate 10...

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Abstract

The invention provides a light-emitting diode and a manufacturing method thereof. The manufacturing method comprises the following steps: firstly, forming a light-emitting epitaxial layer and a transparent conducting layer on the surface of a semiconductor substrate, and annealing the transparent conducting layer; secondly, etching an N electrode manufacturing area, and forming an etching window in an area of the transparent conducting layer in which a P electrode is to be manufactured; thirdly, manufacturing a reflecting mirror in the etching window; and finally, manufacturing the P electrode so as to enable the P electrode to cover the surface of the reflecting mirror and be in ohmic contact with the transparent conducting layer, and manufacturing an N electrode in the N electrode manufacturing area. The manufacturing method has the advantages as follows: a high-reflectivity layer is manufactured under the P electrode, and photons generated by a light-emitting area are almost all reflected back, and are rarely absorbed by the P electrode, so that the light-emitting efficiency of an LED chip is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its cor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/10
CPCH01L33/0062H01L33/06H01L33/10
Inventor 朱广敏郝茂盛齐胜利潘尧波张楠陈诚袁根如李士涛
Owner EPILIGHT TECH