Method for preparing CIGS powder through dry method

Abstract

The invention relates to a CIGS absorbing layer of a solar cell, in particular to a method for preparing CIGS powder through a dry method. The method comprises the steps that copper and indium alloy powder, copper and gallium alloy powder and selenium powder are uniformly mixed to obtain a mixture of copper, indium, gallium and selenium; the mixture is arranged in a die and pressurized to form a blank body; the blank body is arranged in a reaction kettle, and high pressure protection gas is guided into the reaction kettle; the blank body is lighted and reacts to generate a sintering body; after being cooled to the indoor temperature, the sintering body is smashed to obtain the CIGS powder. According to the method, the copper and indium alloy powder and the copper and gallium alloy powder are prepared and then mixed with the selenium powder so that the problems that direct mixing of selenium and gallium or indium is difficult and poison or explosion may be caused in the mixing process can be solved, and the safety of the preparation process is improved. Other external heat sources are not needed in the process of lighting the blank body, and therefore the energy consumption is low, equipment is simple, and the cost is low. In the reaction and synthesis processes, due to the fact that the reaction temperature is high, volatile matter can be evaporated, and the purity of products is high.

Description

technical field [0001] The present invention relates to materials for preparing CIGS absorbing layers of solar cells, in particular to methods for preparing CIGS powders. Background technique [0002] The CIGS absorber layer of thin-film solar cells is the core part of solar cells. There are many methods for preparing the absorber layer. For example, the metal or alloy film is coated with sputtering equipment, and then the metal or alloy film is selenized by selenization to form CIGS. Thin-film light absorbing layer, but its photoelectric conversion efficiency is poor; another example is to use CIGS target with sputtering equipment to directly sputter on the substrate to form CIGS absorbing layer. The absorbing layer made by this method has better photoelectricity The industry actively competes to invest in research and development for conversion efficiency. [0003] There are also many methods for manufacturing CIGS targets, such as co-sputtering method, powder metallurgy ...

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Problems solved by technology

But this method has the problem of solvent pollution; the process of chemical wet synthesis method is relatively simple, easy to industrialization, but it is easy to be disturbed by oxygen when preparing selenium compounds, the selection of selenium source is very important, so the preparation of this method The conditions are demanding and not easy to control

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