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Equipment and method for preparing chlorosilane from silane through reverse disproportionation

A technology of anti-disproportionation and chlorosilane, which is applied in the field of silane anti-disproportionation to prepare chlorosilane, which can solve the problems of safety and hidden dangers of silane, and achieve the effects of reducing risk, improving utilization rate and reducing total investment

Active Publication Date: 2014-04-09
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the process of producing polysilicon by using the silane method, due to the presence of some undecomposed silane in the reaction tail gas, in view of the potential safety hazards of silane, the patent of the present invention provides a method for preparing chlorosilane by deproportionation of silane to ensure the safety of the polysilicon reduction furnace Production

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  • Equipment and method for preparing chlorosilane from silane through reverse disproportionation

Examples

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example 1

[0030] Take a polysilicon enterprise with an annual output of 4000t and an annual production time of 8000h as an example.

[0031] High-purity polysilicon is produced by using high-purity silane and hydrogen as raw materials. The feed rate of high-purity silane and hydrogen is 0.5t / h, and it directly enters the reduction furnace (1) to prepare high-purity polysilicon; the undecomposed polysilicon in the polysilicon reduction furnace (1) Silane and hydrogen are introduced into the anti-disproportionation rectification tower (2), and the anti-disproportionation rectification tower has 30 theoretical plates.

[0032] After mixing silane with dichlorodihydrosilane and silicon tetrachloride, it is fed from the 16th theoretical plate of the catalytic rectification tower. The feed molar ratio of each substance is 10:0.1:0.2 (silicon tetrachloride: dichlorodihydrosilane: silane). The reaction position is the 15th theoretical plate of the anti-disproportionation distillation column. ...

example 2

[0034] Take a polysilicon enterprise with an annual output of 5000t and an annual production time of 8000h as an example.

[0035] High-purity polysilicon is produced by using high-purity silane and hydrogen as raw materials. The feed rate of high-purity silane and hydrogen is 0.6t / h, which directly enters the reduction furnace (1) to prepare high-purity polysilicon; the undecomposed polysilicon in the polysilicon reduction furnace (1) Silane and hydrogen are introduced into the anti-disproportionation rectification tower (2), and the anti-disproportionation rectification tower has 1000 theoretical plates.

[0036] Silane, trichlorosilane and silicon tetrachloride are fed separately. Silicon tetrachloride is fed from the top position of the catalytic rectification tower, and trichlorosilane and silane are fed from the 16th theoretical plate of the catalytic rectification tower. The feed molar ratio of each substance is 1000:5:1 (silicon tetrachloride: trichlorosilane: silane)...

example 3

[0038] Take a polysilicon enterprise with an annual output of 1000t and an annual production time of 8000h as an example.

[0039]High-purity polysilicon is produced by using high-purity silane and hydrogen as raw materials. The feed rate of high-purity silane and hydrogen is 0.1t / h, and it directly enters the reduction furnace (1) to prepare high-purity polysilicon; the undecomposed polysilicon in the polysilicon reduction furnace (1) Silane and hydrogen are introduced into the anti-disproportionation rectification tower (2), and the anti-disproportionation rectification tower has 5 theoretical plates.

[0040] Silane is mixed with trichlorosilane and silicon tetrachloride and then fed from the third theoretical plate of the catalytic rectification tower. The feed molar ratio of each substance is 3:0.1:1 (silicon tetrachloride: trichlorosilane: silane). The reaction position is the second theoretical plate of the anti-disproportionation distillation column. The reaction tem...

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Abstract

The invention relates to equipment and a method for preparing chlorosilane from silane through reverse disproportionation. the method comprises the following steps of introducing the tail gas of a polycrystalline silicon reduction furnace, trichlorosilane (or dichlorosilane) and silicon tetrachloride to the reverse disproportionation reaction section for a reverse disproportionation reaction in the presence of a catalyst at the reaction temeperature of 30-80 DEG C and reaction pressure of 0.1-5MPa in a feeding mole ratio of silicon tetrachloride to trichlorosilane (or dichlorosilane) to the feed silane is (3-1000): (0.1-5): 1, so as to generate dichlorosilane; carrying out reverse disproportionation reaction on the generated dichlorosilane and excessive silicon tetrachloride to generate trichlorosilane; discharging the trichlorosilane and hydrogen from the top of the tower and separating in a tower top condenser; and discharging the excessive silicon tetrachloride from the bottom of a rectifying tower. According to the invention, the non-decomposed silane is synthesized into the trichlorosilane through the reverse disproportionation process without a silane storage tank. As a result, the production danger of preparing polycrystalline silicon by the silane method is reduced, and the utilization rate of the raw materials is increased and the total investment on the process is reduced.

Description

technical field [0001] The invention relates to a device and a method for preparing chlorosilane by dedisproportionation of silane, and mainly relates to a safe production process for preparing polysilicon by a silane method. Background technique [0002] Polysilicon is the cornerstone of the global electronics industry and photovoltaic industry, and is the main material for preparing solar power generation equipment. Its production cost is relatively high, accounting for about 50% of the total cost of solar power generation, which is one of the main factors restricting the development of solar power generation technology. Exploring low-cost, high-quality polysilicon production methods is one of the effective ways to promote the rapid development of the photovoltaic industry. [0003] At present, polysilicon production processes mainly include improved Siemens method, silane method, fluidized bed method, metallurgical method and so on. The preparation of polysilicon by the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
CPCY02P20/10
Inventor 刘春江高飞黄哲庆齐文哲袁希钢
Owner TIANJIN UNIV
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