HEMT device with back surface field plate structure and manufacturing method of HEMT device
A technology of plate structure and back surface field, applied in the field of HEMT devices, can solve the problems of difficulty in releasing electrons and discounts, and achieve the effect of increasing the breakdown voltage and suppressing the current collapse effect.
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Embodiment 1
[0054] Example 1 see image 3 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.
[0055] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).
[0056] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.
[0057] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source and the drain 4 (or only extends toward the drain 4 or the source 5, see Figure 4 It is shown that the b...
Embodiment 2
[0063] Example 2 see Figure 6 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.
[0064] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).
[0065] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.
[0066] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source and the drain 4 (or only extends toward the drain 4 or the source 5, see Figure 5 It is shown that the ...
Embodiment 3
[0072] Example 3 see Figure 7 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.
[0073] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).
[0074] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.
[0075] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source 5 and the drain 4 respectively.
[0076] Wherein, an insulating dielectric layer 8 may also be provided ...
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