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HEMT device with back surface field plate structure and manufacturing method of HEMT device

A technology of plate structure and back surface field, applied in the field of HEMT devices, can solve the problems of difficulty in releasing electrons and discounts, and achieve the effect of increasing the breakdown voltage and suppressing the current collapse effect.

Active Publication Date: 2014-04-09
江苏盐综产业投资发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these problems can only solve the "current collapse" when the device works at low voltage, because at low voltage, electrons only fill the trap states on the semiconductor surface, and when the device works at high voltage, electrons will be more inclined to In order to fill the deep-level trap states in the semiconductor body at the bottom, these deep-level trap states will be more difficult to release electrons than the surface trap states. "Collapse" effect will be greatly reduced

Method used

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  • HEMT device with back surface field plate structure and manufacturing method of HEMT device
  • HEMT device with back surface field plate structure and manufacturing method of HEMT device
  • HEMT device with back surface field plate structure and manufacturing method of HEMT device

Examples

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Comparison scheme
Effect test

Embodiment 1

[0054] Example 1 see image 3 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0055] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).

[0056] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.

[0057] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source and the drain 4 (or only extends toward the drain 4 or the source 5, see Figure 4 It is shown that the b...

Embodiment 2

[0063] Example 2 see Figure 6 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0064] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).

[0065] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.

[0066] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source and the drain 4 (or only extends toward the drain 4 or the source 5, see Figure 5 It is shown that the ...

Embodiment 3

[0072] Example 3 see Figure 7 , the HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0073] The HEMT has a drain 4 and a source 5 . The drain 4 and the source 5 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain electrode 4 and the source electrode 5 are ohmic contacts formed by rapid high-temperature annealing of multilayer metals (such as Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.).

[0074] Further, the HEMT has a gate 6, between the source 5 and the drain 4, the distance close to the source 5 is relatively short, and the gate 6 is located on AlGaN.

[0075] The back field plate electrode 9 is located on the GaN, overlaps the gate 6 in the vertical direction, and extends toward the source 5 and the drain 4 respectively.

[0076] Wherein, an insulating dielectric layer 8 may also be provided ...

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Abstract

The invention discloses an HEMT device with a back surface field plate structure and a manufacturing method of the HEMT device. The device can be manufactured through a common semiconductor device machining technology. The device comprises a source electrode, a drain electrode, a heterostructure and a back field plate electrode. The source electrode and the drain electrode electrically connected through two-dimensional electron gas formed in the heterostructure, the source electrode, the drain electrode and the heterostructure form ohmic contact, the heterostructure comprises a first semiconductor layer and a second semiconductor layer which are arranged in sequence in the setting direction, the first semiconductor layer is arranged between the source electrode and the drain electrode, a grid electrode is arranged on the surface of the first semiconductor layer, Schottky contact is formed between the grid electrode and the first semiconductor layer, and the back field plate electrode is arranged on the surface of one side, far away from the first semiconductor layer, of the second semiconductor. The puncture voltage of the device can be effectively improved, and the effect of electric current collapsing can be restrained to the maximum degree.

Description

technical field [0001] The invention relates to a HEMT (High Electron Mobility Transistor, high electron mobility transistor) device, in particular to a HEMT device with a back field plate structure and a preparation method thereof. Background technique [0002] Group III nitride semiconductor HEMT devices, due to piezoelectric polarization and spontaneous polarization effects, will form a two-dimensional electron gas with high concentration and high mobility at the heterojunction interface, such as the AlGaN / GaN interface. In addition, the HEMT device with group III nitride semiconductor as the substrate material can obtain a high breakdown voltage and a low specific on-resistance at the same time. Due to the large band gap of the material, it has high high temperature operating performance and good radiation resistance. Therefore, it is not only suitable for high-frequency power amplifier devices, but also applicable to the field of power electronics for high-power power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/40H01L21/335
CPCH01L29/402H01L29/66462H01L29/7786
Inventor 董志华蔡勇于国浩张宝顺
Owner 江苏盐综产业投资发展有限公司
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