Novel high-voltage bidirectional triggering device and manufacturing method of novel high-voltage bidirectional triggering device
A technology of bidirectional triggering and manufacturing method, applied in semiconductor devices, electrical components, zinc oxide/zinc hydroxide, etc., can solve the problems of low high temperature reliability, high triggering power consumption, low triggering power of bidirectional triggering diodes, etc. The effect of low voltage and high conversion resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0019] Select NTD single wafer with a thickness of 210μm and a resistivity of 5Ω·cm, marking, cleaning and drying for later use; a field oxide layer is grown on the surface of the silicon wafer, and the thickness of the oxide layer is 1μm; negative photoresist and double-sided photolithography are used for processing Double-sided photolithography of the second P well 5; perform N-type ion implantation, and the implantation condition is that the dose is 2e13cm -2 , The energy is 50KeV, and the junction is pushed after injection. The junction push condition is that the temperature is 1100°C, the time is 130min, 2 The flow rate is 1800mL / min, N 2 The flow rate is 4000mL / min, and a P-type silicon wafer with a resistivity and thickness similar to the selected N-type single crystal material is set as a companion piece during silicon wafer ion implantation and push junction; 2 o 3 The Ga source is used as the Ga source for gallium diffusion in the P-type layer. The pre-deposition c...
Embodiment 2
[0024] Select NTD single wafer with a thickness of 220μm and a resistivity of 7Ω·cm. It is marked, cleaned, and dried for use; the surface of the silicon wafer grows a field oxide layer, and the thickness of the oxide layer is 1.3μm; a negative photoresist and a double-sided photolithography machine are used Perform double-sided photolithography of the second P well 5; perform N-type ion implantation, and the implantation condition is that the dose is 3e13cm -2 , The energy is 60KeV, and the junction is pushed after injection. The junction push condition is that the temperature is 1170°C, the time is 140min, 2 The flow rate is 2000mL / min, N 2 The flow rate is 5000mL / min, and two P-type silicon wafers with a resistivity and thickness similar to the selected N-type single crystal material are set as companion wafers during silicon wafer ion implantation and push junction; 2 o 3 The Ga source is used as Ga source for gallium diffusion in P-type layer. 2 The flow rate is 250mL / ...
Embodiment 3
[0029] Select NTD single wafer with a thickness of 230μm and a resistivity of 8Ω·cm. It is marked, cleaned, and dried for use; the surface of the silicon wafer grows a field oxide layer, and the thickness of the oxide layer is 1.5μm; a negative glue and a double-sided photolithography machine are used. , the mask plate is used for double-sided photolithography of the second P well 5; N-type ion implantation is performed, and the implantation condition is that the dose is 3.5e13cm -2 , The energy is 70KeV, and the junction is pushed after injection. The junction pushing conditions are that the temperature is 1200°C, the time is 150min, 2 The flow rate is 2200mL / min, N 2 The flow rate is 6000mL / min, and two P-type silicon wafers with a resistivity and thickness similar to the selected N-type single crystal material are set as companion wafers during silicon wafer ion implantation and push junction; 2 o 3 The Ga source is used as Ga source for gallium diffusion in P-type layer....
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More