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LED structure with high light extraction efficiency and manufacturing method thereof

A technology of LED structure and high light extraction, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high technical difficulty, high cost, complex preparation process, etc., to improve the probability of vertical emission, improve light extraction efficiency, and low cost Effect

Inactive Publication Date: 2014-04-16
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Application Information

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Problems solved by technology

However, because the preparation process of this flip-chip photonic crystal structure is too complicated and technically difficult, the cost is high, which limits the popularization and application of this technology in LEDs.

Method used

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  • LED structure with high light extraction efficiency and manufacturing method thereof
  • LED structure with high light extraction efficiency and manufacturing method thereof

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Embodiment Construction

[0039] Embodiments of the present invention are described below through specific examples, and those skilled in the art can understand other advantages and functions of the present invention by referring to the specific embodiments disclosed in this specification. It is to be understood that other embodiments may be utilized and structural and functional modifications may be made without departing from the scope of the present invention.

[0040] The LED structure with high light extraction efficiency provided by the present invention will be further described in detail below in conjunction with specific examples, as figure 2 Shown is a GaN LED fabrication method with a photonic crystal structure, including the following steps:

[0041] First proceed to step 1, such as figure 2 (a) shown. A preferred solution as this embodiment is:

[0042] In the first step, a sapphire pattern substrate 1 is provided, and SiH4 (silane) and NH3 (ammonia) are used as source gases, such as ...

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Abstract

The invention discloses an LED structure with high light extraction efficiency and a manufacturing method of the LED structure. In order to improve the light extraction efficiency of the LED structure, the LED structure comprises a metal reflecting layer, a substrate, an LED epitaxial layer, a quantum well light-emitting layer and a P-type conducting layer, wherein the metal reflecting layer, the substrate, the LED epitaxial layer, the quantum well light-emitting layer and the P-type conducting layer are sequentially arranged from bottom to top, the upper surface of the substrate is provided with multiple columnar protrusions, a SiNx thin film layer is arranged between the upper surface of each columnar protrusion and the lower surface of the LED epitaxial layer, and the upper surface of the LED epitaxial layer is higher than the upper surface of each SiNx thin film layer. An LED which is provided with a photonic crystal structure and manufactured through the manufacturing method has the advantages of being low in manufacturing cost, simple, easy to obtain, high in efficiency and the like.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode (LED) device manufacturing, and more particularly relates to an LED structure with high light extraction efficiency and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes are widely used in white light lighting, backlight display, traffic signs, communication, signal indication, large-screen display and other fields due to their characteristics of energy saving, high efficiency, no pollution, small size, and long life, and meet the requirements of lightness, thinness, etc. miniaturization requirements. In particular, high-brightness light-emitting devices made of III-V semiconductor materials represented by GaN, AlGaN, InGaN, AlInGaN, etc., have attracted great attention due to their excellent luminous efficacy, and are considered to be the most ideal semiconductors in the future. One of the white light lighting sources. [0003] For GaN ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/60H01L33/58H01L33/22
CPCH01L33/02H01L33/22H01L33/46
Inventor 韩云鑫魏唯陈峰武巩小亮
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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