LED structure with high light extraction efficiency and manufacturing method thereof
A technology of LED structure and high light extraction, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high technical difficulty, high cost, complex preparation process, etc., to improve the probability of vertical emission, improve light extraction efficiency, and low cost Effect
Inactive Publication Date: 2014-04-16
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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The invention discloses an LED structure with high light extraction efficiency and a manufacturing method of the LED structure. In order to improve the light extraction efficiency of the LED structure, the LED structure comprises a metal reflecting layer, a substrate, an LED epitaxial layer, a quantum well light-emitting layer and a P-type conducting layer, wherein the metal reflecting layer, the substrate, the LED epitaxial layer, the quantum well light-emitting layer and the P-type conducting layer are sequentially arranged from bottom to top, the upper surface of the substrate is provided with multiple columnar protrusions, a SiNx thin film layer is arranged between the upper surface of each columnar protrusion and the lower surface of the LED epitaxial layer, and the upper surface of the LED epitaxial layer is higher than the upper surface of each SiNx thin film layer. An LED which is provided with a photonic crystal structure and manufactured through the manufacturing method has the advantages of being low in manufacturing cost, simple, easy to obtain, high in efficiency and the like.
Application Domain
Technology Topic
Photonic crystal structureLead structure +4
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Property | Measurement | Unit |
Thickness | 1.0 ~ 2.0 | µm |
Thickness | 2.0 ~ 3.0 | µm |
Height | 2.0 ~ 5.0 | µm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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