LED structure with high light extraction efficiency and manufacturing method thereof
A technology of LED structure and high light extraction, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high technical difficulty, high cost, complex preparation process, etc., to improve the probability of vertical emission, improve light extraction efficiency, and low cost Effect
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[0039] The following describes the embodiments of the present invention through specific specific examples, and those skilled in the art can refer to the specific embodiments disclosed in this specification to understand other advantages and functions of the present invention. It should be understood that other embodiments may be utilized, and structural and functional modifications may be made without departing from the scope of the present invention.
[0040] The LED structure with high light extraction efficiency provided by the present invention will be further described in detail below in conjunction with specific embodiments. figure 2 Shown is a method for preparing a GaN LED with a photonic crystal structure, including the following steps:
[0041] First proceed to step one, such as figure 2 (A) Shown. As a preferred solution of this embodiment:
[0042] The first step is to provide a sapphire pattern substrate 1, using SiH4 (silane) and NH3 (ammonia) as source gases, suc...
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