LED structure with high light extraction efficiency and manufacturing method thereof

A technology of LED structure and high light extraction, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high technical difficulty, high cost, complex preparation process, etc., to improve the probability of vertical emission, improve light extraction efficiency, and low cost Effect

Inactive Publication Date: 2014-04-16

48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP

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Problems solved by technology

However, because the preparation process of this flip-chip photonic crystal structure is too complicated and tec...

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Abstract

The invention discloses an LED structure with high light extraction efficiency and a manufacturing method of the LED structure. In order to improve the light extraction efficiency of the LED structure, the LED structure comprises a metal reflecting layer, a substrate, an LED epitaxial layer, a quantum well light-emitting layer and a P-type conducting layer, wherein the metal reflecting layer, the substrate, the LED epitaxial layer, the quantum well light-emitting layer and the P-type conducting layer are sequentially arranged from bottom to top, the upper surface of the substrate is provided with multiple columnar protrusions, a SiNx thin film layer is arranged between the upper surface of each columnar protrusion and the lower surface of the LED epitaxial layer, and the upper surface of the LED epitaxial layer is higher than the upper surface of each SiNx thin film layer. An LED which is provided with a photonic crystal structure and manufactured through the manufacturing method has the advantages of being low in manufacturing cost, simple, easy to obtain, high in efficiency and the like.

Application Domain

Semiconductor devices

Technology Topic

Photonic crystal structureLead structure +4

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Examples

Experimental program(1)

Example Embodiment

[0039] The following describes the embodiments of the present invention through specific specific examples, and those skilled in the art can refer to the specific embodiments disclosed in this specification to understand other advantages and functions of the present invention. It should be understood that other embodiments may be utilized, and structural and functional modifications may be made without departing from the scope of the present invention.

[0040] The LED structure with high light extraction efficiency provided by the present invention will be further described in detail below in conjunction with specific embodiments. figure 2 Shown is a method for preparing a GaN LED with a photonic crystal structure, including the following steps:

[0041] First proceed to step one, such as figure 2 (A) Shown. As a preferred solution of this embodiment:

[0042] The first step is to provide a sapphire pattern substrate 1, using SiH4 (silane) and NH3 (ammonia) as source gases, such as figure 2 As shown in (a), a SiNx thin film layer with a thickness of about 0.2μm is prepared at a temperature between 500-1000°C by the CVD method;

[0043] The second step is to spray a layer of PMMA barrier layer, and use a nano-imprint template to form a photonic crystal pattern on the barrier layer. The nano-imprint process is carried out under a certain pressure and temperature, and the pattern on the template is "transferred" to the barrier layer On the above, the cross-coupling between the polymers occurs within a few seconds, and a hard resist layer is formed before the template is removed; then under the blocking effect of the barrier layer, the inductively coupled plasma (ICP) etching technology is used to The SiNx film layer covered with a patterned barrier layer and the sapphire substrate are etched vertically at a rate of tens to hundreds of nanometers/min. The barrier layer is removed by oxygen plasma gas, such as figure 2 (B) Shown.

[0044] Go to step two, such as figure 2 As shown in (c), the LED epitaxial layer is epitaxially grown on the patterned substrate described in step 1.

[0045] As a preferred solution of this embodiment: figure 2 As shown in (c), the GaN intrinsic layer and the N-type conductive layer, the InGaN/GaN quantum well light-emitting layer, and the P-type conductive layer are epitaxially grown sequentially on the substrate with the photonic crystal structure using the metal organic chemical vapor deposition method. The thickness of the GaN intrinsic layer and the N-type conductive layer should be controlled slightly higher than the upper surface of the SiNx film layer, and the surface should be smooth and continuous. Thus, the photonic crystal located in the N-type conductive layer is prepared.

[0046] Proceed to step 3, please refer to 2(d). On the P-type conductive layer described in step 2, the template pattern is transferred to the P-type conductive layer by nanoimprinting to form periodic or quasi-periodic air columns. , The photonic crystal located in the P-type conductive layer is prepared.

[0047] Proceed to step 4, please refer to 2(e). On the back of the substrate of the LED epitaxial wafer described in step 3, use thermal evaporation, magnetron sputtering or ion beam sputtering techniques to make a metal reflective layer, selected from A metal composed of Al, Au, Ag, Ti, Pt and Ni.

[0048] The present invention exemplifies the above-mentioned preferred embodiments, but it should be noted that various changes and modifications can be made by those skilled in the art. Therefore, unless such changes and modifications deviate from the scope of the present invention, they should all be included in the protection scope of the present invention.

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PUM

Property	Measurement	Unit
Thickness	1.0 ~ 2.0	µm
Thickness	2.0 ~ 3.0	µm
Height	2.0 ~ 5.0	µm
tensile		MPa
Particle size		Pa
strength	10

Description & Claims & Application Information

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Classification and recommendation of technical efficacy words

Improve light extraction efficiency

LED structure with high light extraction efficiency and manufacturing method thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

Image

Examples

Example Embodiment

PUM

Description & Claims & Application Information

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