Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Synthetic method of high-selectivity comb-type CdS nanometer material

A nanomaterial, high-selectivity technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of rare reports of high-selectivity comb CdS nanomaterials, and achieve good repeatability. sexual effect

Active Publication Date: 2015-04-29
广西平果润民发展有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there have been reports on the synthesis of CdS nanomaterials with certain specific structures (nanobelts, nanowires, etc.), but reports on highly selective comb-like CdS nanomaterials are very rare.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Synthetic method of high-selectivity comb-type CdS nanometer material
  • Synthetic method of high-selectivity comb-type CdS nanometer material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Below are examples of the present invention (reagents used in the examples are all chemically pure), the main steps of the experimental process:

[0013] First, use a small ion sputtering device to coat a layer of Au film with a thickness of about 50 nm on a (100) crystal orientation Si substrate with a size of 0.9 cm*0.9 cm; put a ceramic boat containing 1.4 g of CdS powder into a quartz tube And push it to the position of the thermocouple of the tube furnace, push the Si substrate coated with Au film into the quartz tube to a position 17 cm away from the left side of the ceramic boat, seal the quartz tube, use a mechanical pump to pump air for 1 h, and then move it from the right Argon gas was introduced into the side at a flow rate of 30 sccm, and the gas flow rate of the gas inlet and outlet on both sides of the enamel was adjusted, and the air pressure in the quartz tube was maintained at 0.1 MPa by using a mechanical pump; under the protection of argon gas, the rea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a synthetic method of a high-selectivity comb-type CdS nanometer material. The synthetic method is characterized by comprising the following steps: (1) depositing an Au film on a Si sheet; (2) placing CdS powder in a ceramic boat, pushing the integral ceramic boat into a quartz tube, and then placing the Si sheet plated with the Au film on the left side of the ceramic boat; and (3) sealing the quartz tube, exhausting, introducing argon from the right side of the ceramic boat, maintaining the pressure in the tube at 0.1MPa, raising the temperature to 800 DEG C, and maintaining constant temperature for 2 hours under protection of argon, thus obtaining the material when the reaction temperature is reduced to room temperature. Research results show that the method has very high repeatability, and is simple to operate and environment-friendly.

Description

technical field [0001] The present invention relates to a high-selectivity synthesis scheme of a II-VI semiconductor optoelectronic material—comb-shaped CdS nanomaterials. The high-selectivity synthetic material is synthesized through the use of Au nanoparticle catalysis by the physical vapor deposition method. The comb-shaped CdS nanomaterial has laid a solid experimental foundation for the performance research and development of this kind of semiconductor optoelectronic material. Background technique [0002] Ⅱ-Ⅵ compound semiconductors are widely used in lasers, light-emitting diodes, solar cells, etc. due to their wide band gap range, direct transition energy band structure, and good luminescent properties. Nano-scale II-VI semiconductor materials show great application potential in the field of nano-optoelectronic devices because of their unique physical properties and meet the needs of miniaturized devices. Therefore, the synthesis, optoelectronic properties of II-VI s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G11/02B82Y40/00B82Y30/00
Inventor 祁小四刘洪超邓朝勇
Owner 广西平果润民发展有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products