Array substrate, manufacturing method thereof and display device

Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display device. The array substrate comprises a supporting base substrate, a grid line, a data line, pixel electrodes and a thin film transistor, wherein the grid line, the data line, the pixel electrodes and the thin film transistor are formed on the supporting base substrate. The thin film transistor comprises a grid electrode, an active layer and a source-drain electrode graph, the source-drain electrode graph is connected with the active layer, and the pixel electrodes are connected with the active layer. A source electrode and a drain electrode are arranged to be the source-drain electrode graph, the area of the thin film transistor is reduced, and therefore the aperture opening ratio of pixels is improved. The source electrode and the drain electrode are arranged to be one source-drain electrode graph, the width-to-length ratio W/L of a channel of the thin film transistor is increased, the charging current of the thin film transistor is improved, and therefore the charging capacity of the thin film transistor is improved.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Liquid crystal displays are currently commonly used flat panel displays. Among them, Thin Film Transistor Liquid Crystal Display (TFT-LCD) is the mainstream product in liquid crystal displays. [0003] Among them, the array substrate is an important part of the thin film transistor liquid crystal display. In the prior art, an array substrate includes a base substrate and gate lines and data lines formed on the base substrate. The gate lines and data lines define a pixel unit. The pixel unit includes a thin film transistor and a pixel electrode. The thin film transistor includes: The gate electrode, the active layer, the source electrode and the drain electrode, and the pixel electrode is electrically connected to the drain electrode. At present, the channel of the thin film...

AI Technical Summary

Problems solved by technology

[0005] 1) Due to the separation of the source and drain, the area of ​​the thin film transistor is larger, which reduces the aperture ratio of the pixel;

[0006] 2) Due to the separation of the source and the drain, the width-to-length ratio W / L of the thin film transistor channel is small, which reduces the charging current of the thin film transistor, thereby reducing the charging capacity of the thin film transistor

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