Method for forming patterned metal hard mask in interconnected structure

Abstract

The invention provides a method for forming patterned metal hard mask in an interconnected structure. By means of a property that etching rate on the middle position of an etched object is more than that on the edge position of the etched object in wet etching, primary etching back is executed on the metal hard mask formed by physical vapor deposition in order that a metal hard mask layer with uniform thickness is obtained. Further, the patterned metal hard mask is provided with uniform thickness on the middle position and the edge position of a wafer. Thus, a problem in the prior art is prevented that hollows occur to conductive material filled subsequently and influence the performance of a semiconductor device, wherein the hollows arise from a fact that good etching morphology cannot be acquired when connecting holes are subsequently etched by a dry etching method because difference exists in the thickness of the metal hard mask on a same wafer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a patterned metal hard mask in an interconnection structure. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices already have deep submicron structures, and integrated circuits contain a large number of semiconductor components. In such large-scale integrated circuits, high-performance, high-density connections between components are not only interconnected in a single interconnect layer, but also interconnected between multiple layers. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer dielectric layer interposed therebetween for connecting semiconductor elements. A conventional method generally uses a Damascene dual damascene process to form a connection hole ...

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a method for forming a patterned metal hard mask in an interconnection structure to solve the problem of the metal hard mask formed by physical vapor deposition in the prior art in the wafer edge region and the wafer middle region. There is a difference in thickness, which causes a problem that the reliability of semiconductor devices decreases

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