Preparing method for indium gallium zinc oxide semi-conductor film

A technology of indium gallium zinc oxide and semiconductor, which is applied in the field of preparation of indium gallium zinc oxide semiconductor thin film and preparation of indium gallium zinc oxide transistor, which can solve the problems of voids, many IGZO films, IGZOTFT performance attenuation, etc., and achieve simple preparation process , Improve device performance, the effect of excellent device performance

Inactive Publication Date: 2014-05-07
SHANGHAI JIAO TONG UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

However, the complex chemical reactions of such precursors during annealing may cause more voids in the IGZO film, or the TFT performance of IGZO may be attenuated due to residual anions such as Cl-

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  • Preparing method for indium gallium zinc oxide semi-conductor film
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  • Preparing method for indium gallium zinc oxide semi-conductor film

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Embodiment Construction

[0039] In one embodiment of the present invention, a method for preparing an indium gallium zinc oxide semiconductor thin film by a solution method comprises the following steps:

[0040] The first step, weigh 0.05 mg of gallium acetylacetonate [Ga(C 5 h 7 o 2 ) 3 ] powder and 0.05 mg [Zn(C 5 h 7 o 2 ) 2 ·xH 2 O] powder is dissolved in ethanol solvent, obtain gallium acetylacetonate solution and zinc acetylacetonate solution; Weigh 0.05 mg of indium acetylacetonate [In(C 5 h 7 o 2 ) 3 ] The powder was dissolved in tetrahydrofuran to obtain a solution of indium acetylacetonate.

[0041] The second step is to mix gallium acetylacetonate solution, zinc acetylacetonate solution and indium acetylacetonate solution with different volume ratios according to the molar ratio of gallium, zinc and indium in the precursor solution as x:y:z.

[0042] Correspondingly, gallium, zinc and indium in the precursor solution are x moles, y moles, z moles respectively, C 5 h 7 o 2 Th...

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Abstract

The invention discloses a preparing method for an indium gallium zinc oxide semi-conductor film. The preparing method comprises the following steps: a) preparing an ethanol solution of gallium acetylacetonate, an ethanol solution of zinc acetylacetonate hydrate, and a tetrahydrofuran solution of indium acetylacetonate; b) mixing and stirring the three solutions well, thereby obtaining a polymeric precursor solution of indium gallium zinc oxide; c) depositing the polymeric precursor solution on a substrate material, then carrying out annealing treatment, thereby obtaining the indium gallium zinc oxide semi-conductor film. According to the method, the preparing process is simple and controllable, the cost is low, and the photoelectric property is excellent.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a method for preparing an indium gallium zinc oxide semiconductor film; in particular, the present invention also relates to a method for preparing an indium gallium zinc oxide semiconductor film using an indium gallium zinc oxide semiconductor film as a channel layer material. method of transistors. Background technique [0002] A thin film transistor (Thin Film transistor; TFT) is composed of a semiconductor active layer, that is, a channel layer, a dielectric layer, that is, an insulating layer, a gate electrode, a source electrode, and a drain electrode. Thin film transistors are widely used in the field of flat panel displays due to their easy fabrication and low cost. In recent years, with the development of liquid crystal display, thin film transistor technology has become a symbolic technology of flat panel display, which is characterized by preparing tens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L21/336
CPCH01L21/02565H01L29/66969
Inventor 方汉铿谢应涛蔡述澄欧阳世宏石强
Owner SHANGHAI JIAO TONG UNIV
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