Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby

A technology for nitride semiconductors and light-emitting devices, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the area of ​​the barrier metal layer and reducing the light-emitting area, and achieves the reduction of the area, the increase of the light-emitting area, and the simplification of the light-emitting area. The effect of the manufacturing process

Inactive Publication Date: 2014-05-14
SAMSUNG ELECTRONICS CO LTD
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, when the distance between the barrier metal layer and the electrode is increased, the area of ​​the barrier metal layer increases, resulting in a decrease in the light emitting area.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby
  • Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby
  • Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0031] This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like elements.

[0032] figure 1 is a cross-sectional side view schematically showing a nitride semiconductor light emitting device according to an exemplary embodiment of the present invention.

[0033] refer to figure 1 , the nitride semiconductor light emitting device 100 according to an exemplary embodiment of the present invention may include a first ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive-type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and removing the photoresist film after a reflective metal layer serving as a second electrode and a barrier layer are successively formed on the second conductive-type nitride semiconductor layer exposed by the photoresist film.

Description

technical field [0001] The present invention relates to a method for manufacturing a nitride semiconductor light-emitting device and a nitride semiconductor light-emitting device manufactured by using the method, in particular to a method for manufacturing a nitride semiconductor light-emitting device, which can be achieved by simplifying the process for forming electrodes. To reduce the number of photoresist and photolithography steps while increasing the light emitting area of ​​the active layer. Background technique [0002] In recent years, with the development of light-emitting devices capable of emitting blue, green, and ultraviolet light using gallium nitride (GaN)-based compound semiconductors, it has become possible to display colors in a full color gamut. GaN-based compound semiconductor crystals can be grown on an insulating substrate such as a sapphire substrate, but for this reason, electrodes cannot be formed on the back surface of the substrate. Therefore, bo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/46
CPCH01L33/405H01L33/44H01L2933/0016
Inventor 黄硕珉李进馥张泰盛禹锺均
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com