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Stage electroplating process copper electroplating method

An electroplating process and staged technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the research on the influence of electrolyte electroplating effect, does not raise problems such as electroplating solution, and shortens the time of electroplating process and chemical mechanical polishing process , reduced copper film thickness, high filling rate effect

Inactive Publication Date: 2014-05-21
WUXI XINSANZHOU STEEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] CN102154670A discloses a staged electroplating copper process, but it does not study the influence of the electrolyte on the electroplating effect, and does not propose an electroplating solution suitable for the above electroplating method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Prepare 5000 ml of electrolyte: heat 3000 ml of deionized water to 40 ° C, add 342 g of copper sulfate, stir to dissolve, slowly add 875 g of concentrated sulfuric acid to the above solution, add water to nearly 5000 ml, continue stirring the solution and After it was cooled to room temperature, 300 mg of hydrochloric acid, 400 mg of polyethylene glycol (MW6000), 75 mg of sodium polydithiodipropanesulfonate and 25 mg of ethylenethiourea were added, and finally 5000 ml of water was added and stirred evenly.

[0043] The process conditions in the initial stage are as follows: time: 10 seconds, current density: 0.8 ampere / dm2, silicon wafer rotation speed: 5 rpm, electroplating solution flow rate: 4 liters / min, silicon wafer process position: 5 mm.

[0044] The process conditions in the transition stage are as follows: time: 3 seconds, current density: 0.2 ampere / dm2, silicon wafer rotation speed: 30 rpm, electroplating solution flow rate: 10 liters / min, silicon wafer proce...

Embodiment 2

[0047] The preparation process is basically the same as in Example 1, except that the components and contents of 1000 milliliters of electrolyte are: 50 grams of copper sulfate, 150 grams of sulfuric acid, 10 milligrams of chloride ions, and 20 grams of polyethylene glycol (MW 8000). mg, the accelerator sodium alcohol thiopropane sulfonate is 30 mg, the leveling agent thiazolethione is 0.5 mg, and the rest is deionized water.

[0048] The specific process conditions in the initial stage are: time: 50 seconds, current density: 3 amperes / dm2, silicon wafer rotation speed: 30 rpm, electroplating solution flow rate: 10 liters / min, silicon wafer process position: 10 mm.

[0049] The process conditions in the transition stage are as follows: time: 10 seconds, current density: 0.8 ampere / dm2, silicon wafer rotation speed: 50 rpm, electroplating solution flow rate: 20 liters / min, silicon wafer process position: 5 mm.

[0050] The process conditions of the final stage are as follows: t...

Embodiment 3

[0052] The preparation process is basically the same as in Example 1, except that the composition and content of 1000 milliliters of electrolyte are: 200 grams of copper sulfate, 50 grams of sulfuric acid, 20 milligrams of chloride ions, and 100 milligrams of sodium dodecylsulfonate , Accelerator sodium phenyl polydithiopropane sulfonate is 5 mg, leveling agent ethylene thiourea is 1 mg, and the rest is deionized water.

[0053] The process conditions in the initial stage are as follows: time: 30 seconds, current density: 1.9 ampere / dm2, silicon wafer rotation speed: 18 rpm, electroplating solution flow rate: 7 liters / min, silicon wafer process position: 7 mm.

[0054] The process conditions in the transition stage are as follows: time: 7 seconds, current density: 0.5 ampere / dm2, silicon wafer rotation speed: 40 rpm, electroplating solution flow rate: 15 liters / min, silicon wafer process position: 4 mm.

[0055] The process conditions in the final stage are as follows: time: 2...

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PUM

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Abstract

The present invention relates to a stage electroplating process copper electroplating method, which is characterized in that the method adopts a stage electroplating process and an electroplating solution adapted to the process to treat, wherein the process conditions of each treatment stage in the stage electroplating process treatment comprise that the silicon wafer process position is 2-10 mm, the current density is 0.2-8 A / dm<2>, the silicon wafer rotation speed is 5-50 rotation / min, the electroplating solution flow rate is 4-20 L / min, and the time is 3-500 seconds. According to the present invention, the high filling rate is ensured while the step height of the large size and large depth pattern relative to the unpatterned area is effectively reduced, and the copper film thickness required by the electroplating process is indirectly reduced under the premise of assurance of the chemical mechanical polishing process window so as to shorten the electroplating process time and the chemical mechanical polishing process time, and save chemical material consumption.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a stepwise electroplating process copper electroplating method. Background technique [0002] As individual devices become smaller and smaller and integrated circuits run faster and faster, traditional aluminum manufacturing processes can no longer meet the requirements. Therefore, copper interconnection technology has developed into the mainstream semiconductor integrated circuit interconnection technology, and copper electroplating technology It outperforms traditional film-forming processes such as PVD and CVD, and becomes the main process for preparing copper films in copper interconnection technology. [0003] At the same time, as the concept of the Internet of Things heats up, radio frequency chips have gradually become a hot spot in the market. For chips prepared by traditional CMOS technology, its high-frequency performance is relatively general, and it ...

Claims

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Application Information

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IPC IPC(8): C25D3/38C25D5/18C25D7/12H01L21/288H01L21/445
Inventor 林永峰
Owner WUXI XINSANZHOU STEEL
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