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Beam uniformity adjusting device in ion implantation system

A technology of an ion implantation system and an adjustment device, which is applied in the field of semiconductor device manufacturing control systems, can solve problems such as poor beam quality and beam divergence, and achieve the effects of easy processing and manufacturing, easy control, and simple structure

Inactive Publication Date: 2014-05-21
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention discloses a device for adjusting the uniformity of the ion beam current in the ion implanter system, which aims at the existing phenomenon of beam divergence and poor beam quality, even for ultra-low energy beam transmission, extraction electrodes or transmission The beam uniformity problems caused by the deviation of the device position and the excessively long transmission path can be well solved without affecting the quality of the final ion implantation product

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  • Beam uniformity adjusting device in ion implantation system
  • Beam uniformity adjusting device in ion implantation system
  • Beam uniformity adjusting device in ion implantation system

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Embodiment Construction

[0019] Attached below figure 1 , attached figure 2 And attached image 3 The present invention is further introduced, but not as a limitation to the present invention.

[0020] see figure 1 , figure 2 with image 3 , a beam uniformity adjustment device in an ion implantation system is divided into upper and lower parts, which are symmetrically arranged on both sides of the beam line path (1); the upper and lower parts respectively include a coil upper and lower side cover plates (2) and (8) , 12 small magnetic poles (3) and multi-pole coils (4) of multi-pole coils, 1 upper and lower base plate (5) and (9), 1 cooling pipe (6), 2 terminal blocks (7); Pole coil small magnetic poles (3) and multi-pole coils (4) are distributed at a certain angle and distance, and are installed on the upper and lower base plates (5) and (9), and the upper and lower base plates (5) and (9) bottoms are fixed with The cooling pipe (6) ensures the working temperature of the system; the upper an...

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Abstract

The invention discloses a beam uniformity adjusting device in an ion implantation system. The beam uniformity adjusting device comprises a beam wire pathway (1), coil lower-upper side cover plates (2), multi-pole coil small poles (3), multi-pole coils (4), upper-lower base plates(5), cooling water pipes (6), and a wiring terminal (7). Besides, the device is characterized in that 12 groups of multi-pole coil small poles (3) and the multi-pole coils (4) are arranged in an upper-lower symmetric mode; each group of multi-pole coil small poles (3) and multi-pole coils (4) are symmetrically arranged at the two sides of the beam wire pathway (1) and are connected in series and are powered by the same power supply. The multi-pole coil small poles (3) and the multi-pole coils (4) are respectively powered independently by twelve power supplies. The currents in the coils are adjusted and thus different magnetic field distributions are generated inside the beam wire pathway (1), thereby achieving an objective of beam wire path adjustment. The invention, which belongs to the semiconductor manufacturing field, relates to an ion implantation device.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, that is, an ion implanter, in particular to a beam uniformity adjustment device for the ion implanter. Background technique [0002] With the development of semiconductor technology, the uniformity and stability of the beam is becoming more and more important to the ion implantation system, which has a great impact on the quality of implanted products and the industrialization of ion implanters. If the beam energy of the ion implanter is very low, especially when the beam current is large and the transmission path is long, due to the influence of the space charge effect, the ion beam diverges seriously, and its transmission efficiency is extremely low, so that the beam that finally reaches the implanted wafer is small. , the beam quality is poor and cannot meet the requirements of the implantation process; the control of the uniformity and stability of the ion beam has specia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/147
Inventor 庞云玲
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP