sic power switching device and silicon igbt hybrid single-phase high-voltage converter

Abstract

The present invention provides a SiC power switching device and a silicon IGBT hybrid single-phase high-voltage converter, which includes 2N low-voltage module units, 2 high-voltage power switching devices and 4 bridge arm inductors, wherein the upper bridge arm of one phase consists of N The low-voltage module unit and the bridge arm inductance are formed in series in sequence, and the lower bridge arm is formed by the bridge arm inductance and N low-voltage module units in series in sequence, and then the upper and lower bridge arms are connected in series; the upper bridge arm of the other phase is composed of a high-voltage power switching device and the bridge arm. The arm inductance is formed in series, the lower bridge arm is formed by the bridge arm inductance and a high-voltage power switch device in series, and then the upper and lower bridge arms are connected in series. The connection points of the upper and lower bridge arm inductances constitute the AC output ends of the corresponding bridge arms. The invention adopts a multi-level control strategy, and the output voltage of the hybrid single-phase high-voltage converter will present a sinusoidal multi-level voltage, reducing harmonics.

Description

technical field [0001] The invention belongs to the field of power electronic converters or high-voltage applications, and relates to a hybrid single-phase multi-level high-voltage converter of a SiC power switching device and a silicon IGBT. Background technique [0002] The advantage of SiC (silicon carbide) power switching devices is that they have high voltage (up to tens of thousands of volts) and high temperature (greater than 500°C) characteristics, breaking through the limitations of silicon-based power semiconductor devices in voltage (thousands of volts) and temperature (less than 150°C) sex. So far, 19.5kV silicon carbide diodes, 3.1kV and 4.5kV gate turn-off thyristors, 10kV silicon carbide MOSFETs and 13~15kV silicon carbide IGBTs have been developed internationally. As the industrialization process continues to accelerate, SiC power switching devices will become the main device for high-voltage, high-capacity industrial applications. [0003] "One generation ...

AI Technical Summary

Problems solved by technology

However, the price of SiC power switching devices is relatively high, and all of them will affect the cost performance of high-voltage converters. For this reason, the present invention proposes a hybrid single-phase multi-level high-voltage converter of SiC power switching devices and silicon IGBTs, which can reduce The cost of the high-voltage converter is low, and the circuit composed of silicon IGBT can be used to realize multi-level control

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