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Dividing method of optical device wafer

A technology for wafer splitting and optical devices, which is applied in semiconductor/solid-state device manufacturing, electrical components, fine working devices, etc. It can solve problems such as difficult alignment of splitting devices, difficult handling, damage or stretching of expansion tapes, etc.

Active Publication Date: 2018-04-20
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] At this time, there are problems that the expansion belt is damaged or stretched, the plate-shaped workpiece is not placed on the support member flatly, the alignment in the dividing device becomes difficult, and the processing after the next process becomes difficult. difficulty

Method used

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  • Dividing method of optical device wafer
  • Dividing method of optical device wafer
  • Dividing method of optical device wafer

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Embodiment Construction

[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. refer to figure 1 , is a front perspective view of the optical device wafer 11 to be processed by the division method of the present invention. The optical device wafer 11 is configured by laminating an epitaxial layer (light emitting layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13 .

[0029] The back surface 11b of the optical device wafer 11 is covered with a reflective film 21 made of metal. The optical device wafer 11 has a surface (second surface) 11 a on which the epitaxial layer 15 is laminated, and a rear surface (first surface) 11 b covered with a reflective film 21 .

[0030] The sapphire substrate 13 has a thickness of, for example, 100 μm, and the epitaxial layer 15 has a thickness of, for example, 5 μm. A plurality of optical devices 19 such as LEDs are divided and formed on the epitaxial layer 15 by dividing lines (streets) 17...

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Abstract

The invention provides a method for segmentation of a plate-shaped object to be processed. The method comprises a laser processing groove forming step that a laser beam with an absorbent wavelength with respect to the plate-shaped object to be processed irradiates a second face of the plate-shaped object to be processed to form a laser processing groove on the second face; and a segmentation step that the plate-shaped object to be processed is carried by and arranged on a supporting member to enable the laser processing groove formed on the second face of the plate-shaped object to be processed to be aligned with the center of a pair of supporting points which designate a gap of the supporting member with the linear gap and that the plate-shaped object to be processed is segmented by virtue of being vertically pressed by a pressing knife along the laser processing groove across an expansion belt from a first face. In the segmentation step, the plate-shaped object to be processed is pressed by the pressing knife across the buffer material so that besides a pressing force applied by the pressing knife onto the plate-shaped object to be processed along the vertical direction, an expansion effect is also applied onto the plate-shaped object to be processed for pressing and dividing the plate-shaped object to be processed towards the two sides with the pressing knife taken as a border.

Description

technical field [0001] The present invention relates to a method of dividing an optical device wafer by irradiating a plate-shaped workpiece such as a semiconductor wafer or an optical device wafer with a laser beam to divide the optical device wafer into chips. Background technique [0002] Wafers such as silicon wafers and sapphire wafers formed on the surface of multiple devices such as ICs, LSIs, and LEDs are divided by processing equipment into individual device chips. The divided device chips are widely used in mobile phones and personal computers. And other electrical equipment. [0003] A dicing method using a cutting device called a dicer is widely used for dividing a wafer. In the dicing method, a cutting blade in which abrasive grains such as diamond are solidified with metal and resin to a thickness of about 30 μm is cut into the wafer while rotating at a high speed of about 30,000 rpm, thereby cutting the wafer and dividing it into individual device chips. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78B28D5/00B28D5/04
CPCB28D5/0011B28D5/0058H01L21/78
Inventor 铃木稔
Owner DISCO CORP