Dividing method of optical device wafer
A technology for wafer splitting and optical devices, which is applied in semiconductor/solid-state device manufacturing, electrical components, fine working devices, etc. It can solve problems such as difficult alignment of splitting devices, difficult handling, damage or stretching of expansion tapes, etc.
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[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. refer to figure 1 , is a front perspective view of the optical device wafer 11 to be processed by the division method of the present invention. The optical device wafer 11 is configured by laminating an epitaxial layer (light emitting layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13 .
[0029] The back surface 11b of the optical device wafer 11 is covered with a reflective film 21 made of metal. The optical device wafer 11 has a surface (second surface) 11 a on which the epitaxial layer 15 is laminated, and a rear surface (first surface) 11 b covered with a reflective film 21 .
[0030] The sapphire substrate 13 has a thickness of, for example, 100 μm, and the epitaxial layer 15 has a thickness of, for example, 5 μm. A plurality of optical devices 19 such as LEDs are divided and formed on the epitaxial layer 15 by dividing lines (streets) 17...
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