Method for improving flash memory high-temperature oxidation treatment
A high-temperature oxidation and flash memory technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid device, etc., can solve the problems of difficult to improve the yield rate of flash memory products, and achieve the effect of improving yield rate and reducing residue
Inactive Publication Date: 2014-06-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] However, in the prior art, it is difficult to improve the yield rate of flash memory products, so improving the yield rate of flash memory products is a method worth looking forward to
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[0023] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0024] In the manufacturing process of flash memory, there are process steps that require high temperature oxidation treatment to grow oxide (for example, oxide used as a spacer). For example, in some specific flash memory processes, it is necessary to grow silicon dioxide SiO with a thickness of 500A to 600A at a high temperature of 800 degrees Celsius and at a low pressure 2 film.
[0025] The inventors of the present invention have advantageously discovered that chloride ions (Cl - ) by-product, if the chloride ions are not removed, it will eventually affect the yield of flash memory products. Correspondingly, the inventors of the present invention propose to reduce residual chlorine ions in the environment by adding a vacuum exhaust functio...
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The invention provides a method for improving flash memory high-temperature oxidation treatment. The method comprises the steps that a wafer is conveyed to a reaction cavity in a furnace body from equipment for containing and conveying a wafer box; the furnace body is connected to a gas integrating system, and the furnace body is connected to a vacuum pumping pump connected with the gas integrating system through a guide pipe; high-temperature oxidation treatment is carried out on the wafer in the reaction cavity in the furnace body, the gas integrating system is used for controlling process gas in the reaction cavity, and the vacuum pumping pump is started in the gas integrating system so that the furnace body can be vacuumized in the high-temperature oxidation treatment process. According to the method for improving flash memory high-temperature oxidation treatment, the vacuum exhaust function is additionally achieved, residuals of chloridion in environment can be reduced, and the yield of flash memory products is effectively improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for improving high-temperature oxidation treatment of flash memory. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. . [0003] Flash memory is a non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not disappear due to power interruption. , and flash memory...
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Login to View More IPC IPC(8): H01L21/8247
CPCH01L21/324H10B69/00
Inventor 李占斌
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP