A kind of production process of large-diameter ultra-thin quartz wafer
A technology of quartz wafer and production process, which is applied to stone processing equipment, fine working devices, manufacturing tools, etc., can solve problems such as difficult batch processing of quartz wafers, high technical difficulty for processors, low production efficiency, etc., and achieve easy solution Effects of scratching, improving utilization rate, and improving production efficiency
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Embodiment 1
[0019] A: Quartz crystal lumps are cut into wafers with a thickness of 0.6mm by a wire saw, poured into a C-shaped edge with an automatic chamfering machine, and put into an etching solution for 12 hours of corrosion to reduce internal stress.
[0020] B: Grind with 16B double-sided grinder and No. 3000 green carbon silica sand, the equipment speed is 10 rpm, the reverse pressure is 80MPa, grind to a thickness of 0.53mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves.
[0021] C: Polish the double-sided polished wafer with a 16B double-sided polishing machine, the equipment speed is 30-40 rpm, the reverse pressure is 110MPa, the polishing powder has a particle size of 1 μm and the polishing time is 90 minutes. The polished wafer size is 0.50mm, take out the wafer and clean it with ultrasonic waves, dry it with a spin dryer, and apply a protective paint on one side of the wafer with a glue spreader.
[0022] D: Put the clean...
Embodiment 2
[0028] A: Quartz crystal lumps are cut into wafers with a thickness of 0.8mm by a wire saw, poured into a C-shaped edge with an automatic chamfering machine, and put into an etching solution for 13 hours to reduce internal stress.
[0029] B: Grind with 16B double-sided grinder and No. 3000 green carbon silica sand, the equipment speed is 10 rpm, the reverse pressure is 80MPa, grind to a thickness of 0.55mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves.
[0030] C: Polish the double-sided polished wafer with a 16B double-sided polishing machine, the equipment speed is 30-40 rpm, the reverse pressure is 110MPa, the polishing powder has a particle size of 1um, and the polishing time is 90 minutes. The polished wafer The size is 0.45mm. Take out the wafer and clean it with ultrasonic waves, dry it with a spin dryer, and apply a protective paint on one side of the wafer with a glue spreader.
[0031] D: Put the cleaned optica...
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