Gas leading-in structure and gas leading-in method of etching equipment cavity

Abstract

The invention discloses a gas leading-in structure of an etching equipment cavity. Uniformly-distributed holes are arranged in the whole plane of a gas leading-in plate, a gas baffle is arranged between the gas leading-in plate and inlet holes, no hole is formed in the intermediate region of the gas baffle, and holes are arranged in the peripheral region. Accumulations can be prevented from being formed in the center of the gas leading-in plate so that etching uniformity can be improved, the probability of faults, such as backpressure alarm and photoresist scorch, when the accumulations fall off can be reduced, sweeping frequency can be reduced, distribution uniformity of gas can also be improved after the gas enters the cavity, and uniformity of the etching process can be further improved. The invention further discloses a gas leading-in method of the etching equipment cavity.

Description

Technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a gas introduction structure for an etching equipment cavity. The invention also relates to a gas introduction method for the cavity of the etching equipment. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, it is necessary to etch silicon wafers by multiple etching processes, such as Figure 1A As shown, it is a schematic diagram of the gas introduction structure of the cavity of the existing etching equipment. An air inlet 103 is provided in the center of the upper cavity cover 102 of the etching equipment cavity 101, and a gas is provided directly below the air inlet 103. In the introduction plate 104, the center of the inlet hole 103 is aligned with the center of the gas introduction plate 104. The gas introduction plate 104 is fixed on the upper cavity cover 102 and forms a space between the gas introduc...

AI Technical Summary

Problems solved by technology

After the deposit 105 accumulates to a certain extent, it needs to be cleaned in time, which will increase the frequency of cleaning

At the same time, when the deposit 105 is not cleaned in time, it will fall to the surface of the silicon wafer 107, which will cause the back pressure alarm of the equipment and burn the photoresist on the silicon wafer 107, reducing the etching success rate

[0007] If the central area of ​​the gas inlet plate 104 is also provided with holes, then when the gas passes through the gas inlet plate 104, since the air inlet hole 103 is located at the central position of the upper chamber cover 102, the gas flows into the cavity from the air inlet hole 103. , the flow rate of the gas below the central region of the gas introduction plate 104 is greater than the flow rate of the surrounding area of ​​the gas introduction plate 104, so that the gas flow rate reaching the surface of the silicon wafer 107 is not uniform, so that the etching rate of the middle area of ​​the silicon wafer 107 is greater than The etching rate in the surrounding area, so the uniformity of etching will become worse, so the above-mentioned problem that the accumulation 105 will be formed in the central area of ​​the gas introduction plate 104 cannot be solved by arranging holes in the central area of ​​the gas introduction plate 104

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