Vacuum chamber measurement using residual gas analyzer

Abstract

The present invention relates to vacuum chamber measurement using a residual gas analyzer. A method of measuring an atmosphere in a guest vacuum chamber of a vacuum tool includes measuring a first composition of the atmosphere in the host vacuum chamber using a residual gas analyzer (RGA). The host and guest vacuum chambers are not coupled during the measuring of the first composition. The host vacuum chamber is coupled to the guest vacuum chamber, so the atmospheres in each can mix in the host vacuum chamber. A second composition of the atmosphere in the host vacuum chamber is measured using the RGA after the chambers are coupled. Using a processor, a composition of the guest atmosphere is automatically determined using the measured first and second compositions. A vacuum tool can include the host and guest chambers, the valve, the RGA, and a processor configured to control the valve to carry out this or other methods.

Description

[0001] Cross References to Related Applications [0002] This application is a non-provisional application claiming the benefit of U.S. Provisional Patent Application Serial No. 61 / 734,205, filed December 6, 2012, and entitled "Using Residual Gas Analyzer For Vacuum Chamber Leak Detection," which is incorporated in its entirety by incorporated herein by reference. technical field [0003] The present application relates to the measurement of gas concentrations or gas partial pressures in chambers, such as vacuum chambers used in semiconductor processing. Background technique [0004] The process of fabricating semiconductors, such as integrated circuit transistors, involves many processes performed at very low pressures. These pressures are maintained in a chamber commonly referred to as a "vacuum chamber". Generally, a vacuum chamber is an enclosure connected to a pumping system, such as a pumping system including a cryopump or a turbopump. The suction system maintains ...

AI Technical Summary

Problems solved by technology

However, these systems have performance limitations due to dynamic pressure changes over short periods of time (e.g., less than 10 seconds) during wafer transfer, which prevents their use in place of ROR testing in production.

For example, some systems are not sensitive enough to detect 2 Handle leaks in nitritation chambers such as Ta(N) or TiN PVD

Furthermore, these systems do not provide for leak detection in process chambers attached to buffer chambers

Furthermore, if a processing recipe requires multiple processing chambers to be open simultaneously, it can be difficult to independently determine the atmosphere in each chamber

Also, pressure transients during wafer movement or disturbances from other actions of the tool can reduce the accuracy of this measurement

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