Reverse-conduction-type IGBT device and formation method thereof

A reverse-conducting device technology, applied in the field of reverse-conducting IGBT devices and their formation, can solve the problems of reverse bias and non-conduction of the collector junction, and achieve the effect of reducing contact resistance and improving performance

Active Publication Date: 2014-06-11
SHANGHAI LIANXING ELECTRONICS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When traditional IGBT devices are subjected to reverse voltage, the collector junction is reversed biased and cannot be turned on

Method used

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  • Reverse-conduction-type IGBT device and formation method thereof
  • Reverse-conduction-type IGBT device and formation method thereof
  • Reverse-conduction-type IGBT device and formation method thereof

Examples

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Embodiment 1

[0045] refer to Figure 6-Figure 15 , the embodiment of the present invention provides a reverse conduction type IGBT device and its forming method, including:

[0046] Step 101: providing a semiconductor substrate 600, the semiconductor substrate 600 may be N-type doped, or P-type doped, depending on the specific circumstances. In the embodiment of the present invention, taking the semiconductor substrate 600 with N-type doping as an example, the reverse conduction IGBT device provided by the present invention and its forming method are described in detail.

[0047] Step 102 : forming a collector region 601 in the lower surface of the semiconductor substrate 600 , and an aluminum metal layer 602 is formed on the surface of the collector region 601 .

[0048] In one embodiment of the present invention, step 102 specifically includes:

[0049] Step 10201: if Image 6 As shown, P-type ion implantation is performed on the lower surface of the semiconductor substrate 600, and c...

Embodiment 2

[0061] refer to Figure 16-Figure 23 , the present invention also provides another reverse conduction type IGBT device and its forming method, including:

[0062] Step 201: providing a semiconductor substrate 700, the semiconductor substrate 700 may be N-type doped, or P-type doped, depending on the specific circumstances. In the embodiment of the present invention, taking the semiconductor substrate 700 with N-type doping as an example, the reverse conduction IGBT device provided by the present invention and its forming method are described in detail.

[0063] Step 202 : forming a collector region 701 and a short circuit region 704 arranged side by side in the lower surface of the semiconductor substrate 700 .

[0064] In one embodiment of the present invention, step 202 specifically includes:

[0065] Step 20201: if Figure 16 with Figure 17As shown, a photoresist 703' is formed on the lower surface of the semiconductor substrate 700, and an etching window corresponding...

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Abstract

The embodiment of the invention discloses a reverse-conduction-type IGBT device which includes a semiconductor substrate; a collection electrode formed in the lower surface of the semiconductor substrate, wherein the collection electrode includes a collector region and a short-circuit region, which are arranged in parallel; an aluminum metal layer formed on the surface of the collection electrode, wherein the aluminum metal layer at least covers the collector region; and a titanium metal layer formed on the surface of the aluminum metal layer. The titanium metal layer covers the collector region and the short-circuit region completely so that excellent ohmic contact is formed between the collector region and the metal layers on the surface of the collector region, and excellent ohmic contact is formed between the short-circuit region and the metal layer on the surface of the short-circuit region so that the contact resistance between the collection electrode and the metal layers on the surface of the collection electrode is reduced and thus the performance of the reverse-conduction-type IGBT device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a reverse conduction IGBT device and a forming method thereof. Background technique [0002] like figure 1 As shown, a traditional IGBT device includes: a drift region 101; a base region 100 located on the upper surface of the drift region 101; a gate structure 105 located on the surfaces of the drift region 101 and the base region 100; The buffer layer 102 on the surface; the collector structure 103 located on the lower surface of the buffer layer 102 and the metal electrode 104 located on the lower surface of the collector structure 103 . [0003] When a traditional IGBT device is subjected to reverse voltage, the collector junction is reverse-biased and cannot be turned on. Therefore, when working, the IGBT device is often used together with an anti-parallel fast recovery diode, so as to provide a current release channel for the inductive load of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/08H01L21/331
CPCH01L29/0821H01L29/66325H01L29/7393
Inventor 张文亮朱阳军田晓丽胡爱斌卢烁今
Owner SHANGHAI LIANXING ELECTRONICS
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