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A preparation method of three-frequency high-density plasma-assisted magnetron sputtering thin film

A technology for plasma and sputtering thin films, which is applied in the field of plasma-assisted magnetron sputtering thin film preparation, can solve the problems of inability to meet the performance requirements of thin films and low plasma density, and achieves high plasma density and high ion flux. Effect

Active Publication Date: 2016-01-27
SUZHOU UNIV
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Problems solved by technology

However, the existing ICP-assisted magnetron sputtering adopts a dual-frequency system, that is, the ICP coil is driven by a 13.56MHz radio frequency power supply, and the sputtering target is driven by a power supply in the frequency range from DC to 1MHz. The plasma density of this system is 10 15 m -3 , the plasma density is low, which cannot meet the performance requirements of the thin film

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  • A preparation method of three-frequency high-density plasma-assisted magnetron sputtering thin film
  • A preparation method of three-frequency high-density plasma-assisted magnetron sputtering thin film
  • A preparation method of three-frequency high-density plasma-assisted magnetron sputtering thin film

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Embodiment 4

[0024] Magnetron sputtering plasma performance of embodiment one triple-frequency discharge

[0025] Adopting the high-density plasma magnetron sputtering thin film preparation method driven by triple frequency provided by the present invention can realize independent control of plasma density, ion flux and ion energy, forming high plasma density, high ion flux and Broad ion energy.

[0026] attached figure 1 Schematic diagram of the structure of the thin film device prepared for high-density plasma magnetron sputtering driven by triple frequency; according to the attached figure 1 , three-frequency driven high-density plasma magnetron sputtering device for preparing thin films includes a vacuum chamber 1, a sputtering target 2, an ICP coil 3, a substrate stage 4, a 60MHz power supply 5 connected to the target 2 and a corresponding matching regulator 51 , a 13.56MHz power supply 6 connected to the ICP coil 3 and a corresponding matching regulator 61, a 27.12MHz power supply ...

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Abstract

The invention discloses a preparation method of a three-frequency high-density plasma assisted magnetron sputtering film. The film is prepared from high-density plasmas enhanced by the inductively coupled discharge of a 13.56 MHz radio-frequency coil and the discharge of a 27.12 MHz radio-frequency substrate table by using a 60 MHz VHF (very high frequency) magnetron sputtering device. According to the novel preparation method of the three-frequency high-density plasma assisted magnetron sputtering film, disclosed by the invention, in the process of sputtering, by using three-frequency discharge, a high plasma density, a high ionic flux and a wide ion energy are obtained, so that defects that plasmas are low in density and low in activity in the process of reaction sputtering in the prior art are overcome, compositions of an obtained product film are close to those in theory, and properties are in line with actual requirements, thereby facilitating the industrialized production and application of advanced films.

Description

technical field [0001] The invention relates to a preparation method of a thin film, in particular to a preparation method of a triple-frequency driven high-density plasma-assisted magnetron sputtering thin film. Background technique [0002] With BaYCuO high temperature superconducting materials, doped ZnO luminescent materials, doped HfO x The development and application of high dielectric constant materials, ITO transparent conductive materials, CN superhard materials, TiN high-temperature conductive materials, etc. in the field of optoelectronics, advanced oxide and nitride thin film materials have attracted people's attention, and the preparation technology of thin films has become one of them. The key to developing applications. Due to its mature technology, good controllability and low equipment investment, magnetron sputtering has become the most important technology for preparing advanced thin films. The special performance of this kind of thin film material mainl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 叶超王响英张苏
Owner SUZHOU UNIV
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