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A kind of manufacturing method of anti-PID crystalline silicon solar cell
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A technology of solar cells and manufacturing methods, which is applied to circuits, photovoltaic power generation, electrical components, etc., and can solve the problem of reducing the anti-reflection effect of silicon nitride and silicon oxide double-layer films, reducing the light utilization rate of solar cells, and affecting the efficiency of solar cells, etc. problem, achieve the effect of improving photoelectric conversion efficiency, improving passivation effect, and fast film formation speed
Active Publication Date: 2016-04-13
CSI CELLS CO LTD
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Problems solved by technology
However, the problems brought about by thicker silicon oxide films are: first of all, it affects the efficiency of the process. Whether it is PECVD or thermal oxidation, it will take a long time to process a large thickness of silicon oxide film.
Secondly, because the refractive index of the silicon oxide film is smaller than that of silicon and silicon nitride, when the thickness of the silicon oxide film is too thick, the anti-reflection effect of the silicon nitride and silicon oxide double-layer film is greatly reduced, so that the light utilization rate of the solar cell is greatly reduced. , affecting the efficiency of solar cells
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Embodiment 1
[0051] A kind of method using ozone to prepare anti-PID film, its step comprises:
[0052] (1) Etching and removing the edge of the diffused silicon wafer, cleaning and removing the phosphosilicate glass layer;
[0053] Among them, HF is used for cleaning, the volume concentration of HF solution is 4%, the solution temperature is 20°C, and the cleaning time is 200s;
[0054] (2) After 10 minutes, place the diffusion surface of the silicon wafer in an ozone environment to grow an ozone oxide film. The ambient temperature is 20° C., the concentration of ozone is 20 ppm, the treatment time is 10 minutes, and the thickness of the generated ozone oxide layer is 1.5 nm;
[0055] (3) After 10 minutes, deposit a silicon nitride film on the silicon wafer to be processed;
[0056] Wherein, the silicon nitride has a thickness of 84nm and a refractive index of 2.06.
Embodiment 2
[0058] A kind of method using ozone to prepare anti-PID film, its step comprises:
[0059] (1) Etching and removing the edge of the diffused silicon wafer, cleaning and removing the phosphosilicate glass layer;
[0060] Among them, HF is used for cleaning, the volume concentration of HF solution is 5%, the solution temperature is 21°C, and the cleaning time is 55s;
[0061] (2) After 5s, place the diffusion surface of the silicon wafer in an ozone environment to grow an ozone oxide film, the ambient temperature is 21°C, the concentration of ozone is 40ppm, the treatment time is 7s, and the thickness of the generated ozone oxide layer is 1.2nm;
[0062] (3) After 15 minutes, deposit a silicon nitride film on the silicon wafer to be processed;
[0063] Wherein, the silicon nitride has a thickness of 85nm and a refractive index of 2.09.
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Abstract
The invention discloses a method for manufacturing a crystalline silicon solar cell resistant to PID. According to the method for manufacturing the crystalline silicon solar cell resistant to the PID, ozone oxidation technology is adopted to manufacture a silicon oxide layer between a silicon substrate and silicon nitride. Due to the fact that the oxidizing ability of ozone is extremely high, the compact silicon oxide layer can be grown rapidly on the surface of the silicon substrate. Due to the fact that the silicon oxide layer can meet PID resistance requirements under the condition that the silicon oxide layer is extremely thin, the problem that the antireflection effect is reduced due to the fact that a silicon oxide layer in the prior art is too thick is solved, and the solar cell manufactured with the method perfectly solves the problem of contradiction between the PID resistance and the utilization rate of light. A thin film adopted in the method is excellent in surface passivation effect, and compared with a single silicon nitride thin film, the cell manufactured with the thin film has the advantage that extra 2 mV-3 mV voltage improvement can be achieved. The method for manufacturing the crystalline silicon solar cell is simple, the film forming speed is high, the thickness of the film can be controlled automatically, the practicability of the whole technology is improved, and an effective approach is provided for large-scale industrial production.
Description
technical field [0001] The invention belongs to the field of manufacturing crystalline silicon solar cells, and in particular relates to a method for manufacturing a crystalline silicon solar cell with anti-PID effect. Background technique [0002] The PID (Potential Induced Degradation) effect is called the high-voltage induced attenuation effect, which is a relatively new attenuation effect that has appeared in the photovoltaic field in recent years. With the gradual promotion and application of photovoltaic grid-connected systems, the system voltage is getting higher and higher, commonly used are 600V and 1000V. The pressure of the cells inside the module relative to the ground is getting higher and higher, and some even reach 600-1000V. Generally, the aluminum frame of the module is required to be grounded, so that a high voltage of 600-1000V is formed between the battery sheet and the aluminum frame. Generally speaking, during the lamination process of component encap...
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