Hydride vapour phase epitaxy equipment

A hydride gas phase and epitaxy technology, which is applied in the direction of chemically reactive gases, chemical instruments and methods, crystal growth, etc., can solve the problems that the substrate cannot be easily realized, the capacity is limited, and it is not safe.

Inactive Publication Date: 2014-06-25
刘祥林
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  • Application Information

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Problems solved by technology

Although this kind of equipment is simple in structure and low in cost, it also has the following serious disadvantages: ① It is not safe, because the quartz tube is a fragile material, which is easy to break and cause
Once the quartz exceeds 1200°C, it will soften, and the heater (usually nickel-chromium alloy) will burn out in the air environment if it exceeds 1200°C; ③The capacity is limited, because the quartz tube should not be made into a large chamber, otherwise it cannot withstand the atmospheric pressure; ④Material uniform

Method used

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  • Hydride vapour phase epitaxy equipment
  • Hydride vapour phase epitaxy equipment
  • Hydride vapour phase epitaxy equipment

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Embodiment Construction

[0039] to combine figure 1 , figure 2 , image 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 It is a specific embodiment of the present invention. The HVPE equipment includes: water-cooled stainless steel chamber (1), insulation layer (2), source heater (3), substrate heater (4), chamber insulator (5), internal reaction chamber (6), Substrate tray (7), tray rotating and lifting mechanism (8), gas injection port (9), metal boat (10), etc.

[0040] The water-cooled stainless steel chamber (1) is divided into three parts, which are respectively an upper cover plate (1A), a lower base plate (1B), and a wall plate (1C), and the middle is sealed with an apron (21), which together form a whole (such as figure 1 shown). The function of the water-cooled stainless steel chamber (1) is to separate the air from the interior of the chamber, and preserve the pressure inside the chamber (1) through the pressure control device. The upper cover plate (1A), the lower ...

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Abstract

The invention discloses hydride vapour phase epitaxy (HVPE) equipment. The hydride vapour phase epitaxy equipment comprises a water-cooling stainless steel vacuum chamber, an insulating layer, a source heater, a substrate heater, a chamber thermal insulation device, an internal reaction chamber, a substrate tray, a rotating mechanism, an air jet hole, a metal boat, a sample inlet, a sample outlet and the like. Compared with conventional HVPE equipment, the HVPE equipment provided by the invention has the advantages that firstly, the water-cooling stainless steel chamber is used for replacing a conventional quartz chamber, and secondly, a built-in heater in the vacuum chamber is used for replacing a conventional external heater.

Description

technical field [0001] The invention relates to a hydride vapor phase epitaxy (HVPE) equipment, especially the HVPE equipment for growing gallium nitride (GaN) and aluminum nitride (AlN). Background technique [0002] Group III nitride represented by gallium nitride (GaN) has become an important semiconductor material. However, due to the lack of substrate materials, it is currently encountering a development bottleneck. Hydride Vapor Phase Epitaxy (HVPE) is currently the most promising growth method for solving nitride (gallium nitride or GaN, aluminum nitride or AlN, etc.) substrates, so it has been valued. [0003] Conventional HVPE equipment, the main body is a quartz tube vacuum chamber. The substrate and the source material are placed inside the quartz tube, and multiple heaters are placed outside the quartz tube. Although this equipment is simple in structure and low in cost, it also has the following serious disadvantages: 1. It is not safe, because the quartz tub...

Claims

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Application Information

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IPC IPC(8): C30B25/02
Inventor 刘祥林
Owner 刘祥林
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