Microelectronic product reliability test platform under force electrothermal multi-field coupling effect

A test platform and microelectronics technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of lack of test technology, no test equipment, complex correlation and coupling effect in reliability testing and evaluation, and achieve the test temperature. The effect of large range and test current density range, wide application range and high degree of automation

Inactive Publication Date: 2014-06-25
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the service of microelectronic products under the action of electromechanical coupling cannot be regarded as a simple superposition of the two effects of stress and current, but there are complex correlation and coupling effects
[0003] At present, there are relatively systematic test methods, standards and equipment for the reliability evaluation and life prediction of microelectronic products under the condition of force, heat and electric single field, but for the microelectronic product under the condition of force, heat and electric multi-field coupling Reliability testing and evaluation still lacks corresponding testing technology, let alone relevant testing equipment

Method used

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  • Microelectronic product reliability test platform under force electrothermal multi-field coupling effect
  • Microelectronic product reliability test platform under force electrothermal multi-field coupling effect
  • Microelectronic product reliability test platform under force electrothermal multi-field coupling effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] The service life prediction of the CSP interconnect package structure sample under the condition of multi-field coupling is as follows:

[0059] (1) Measure the resistance of the sample to be tested, and set the resistance change threshold as 30% of the initial resistance of the sample.

[0060] (2) The single-field electromigration experiment as a comparative experiment was carried out in a constant temperature environment. The CSP samples were divided into 9 groups, 15 samples in each group, and the samples were connected to the constant current source in series. The test was carried out at three groups of different current densities and three groups of different temperatures, and the current densities were 4.4×10 3 A / cm 2 , 4.7×10 3 A / cm 2 , 5.0×10 3 A / cm 2 . The experimental ambient temperatures were 30°C, 50°C, and 70°C, respectively. In the test, the sample resistance change exceeds the threshold as the sample failure criterion.

[0061] (3) The single th...

Embodiment 2

[0068] The service life prediction of the Cu pillar interconnect package structure sample under the condition of multi-field coupling is as follows:

[0069] (1) Measure the resistance of the sample to be tested, and set the resistance change threshold as 20% of the initial resistance of the sample.

[0070] (2) The single-field electromigration experiment as a comparative experiment was carried out in a constant temperature environment. The Cu column samples were divided into 9 groups, 20 samples in each group, and the samples were connected to the constant current source in series. The test was carried out at three different current densities and three different temperatures, and the current densities were 1.1×10 4 A / cm 2 , 1.2×104 4 A / cm 2 , 1.3×10 4 A / cm 2 . The experimental ambient temperatures were 30°C, 50°C, and 70°C, respectively. In the test, the sample resistance change exceeds the threshold as the sample failure criterion.

[0071] (3) A single heat cycle ...

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Abstract

The invention discloses a microelectronic product reliability test platform under a force electrothermal multi-field coupling effect, and belongs to the technical field of a microelectronic product reliability test and assessment device. The test platform is composed of a temperature control system, a current loading system, a signal test and acquisition system, and an experiment box. The temperature control system controls a cooling system and a heater and adjusts the temperature inside the experiment box; the current loading system applies a current load to a microelectronic product to be tested; the signal test and acquisition system tests and acquires currents, voltages, resistance and temperature signals of the microelectronic product to be tested for storage; the running operation of the test platform is controlled by a computer in a unified mode; a low temperature refrigeration system is connected with the experiment box through a refrigeration pipeline; the experiment box is composed of a casing, a heat-insulation layer, an observation window, a heater, a blower fan and a sample support system; and the sample support system is composed of a sample support frame, a test plate and a lead wire connection interface. The platform provided by the invention can realize reliability testing and life prediction of the microelectronic product under a multi-field coupling condition.

Description

technical field [0001] The invention relates to the technical field of reliability testing and evaluation equipment for microelectronic products, in particular to a reliability testing platform for microelectronic products under the coupling action of electromechanical and thermal multi-fields. Background technique [0002] In the modern microelectronics industry, the interconnection manufacturing technology usually physically deposits or chemically bonds the interconnection circuit on the substrate of semiconductor material or high polymer dielectric material. During these physical or chemical processes, the prepared interconnection The conjoined circuit material is usually subject to the strong confinement effect of the matrix, resulting in high process residual stress; in addition, when the current passes through the solder joint to cause temperature changes, due to the difference in thermal expansion coefficient between the solder and the substrate material, it will cause...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00
Inventor 崔学顺郭敬东祝清省刘志权吴迪张磊曹丽华
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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