Low-dosage-rate enhancement effect accelerated testing method based on temperature and dosage rate changes

A low-dose-rate, temperature-changing technology, applied in the electronic field, can solve problems such as long test time, excess base current, and current gain effects, and achieve the effects of easy operation, reduced time and cost, and simple steps

Active Publication Date: 2014-06-25
HARBIN INST OF TECH
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AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problem that the excessive base current and current gain are greatly affected by the long test time of the low dose rate enhancement test, thereby providing an accelerated test method for the low dose rate enhancement effect based on changing the temperature and dose rate

Method used

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  • Low-dosage-rate enhancement effect accelerated testing method based on temperature and dosage rate changes

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 and image 3 Describe this embodiment, the low dose rate enhancement effect acceleration experiment method based on changing temperature and dose rate described in this embodiment, the specific steps of this method are:

[0021] Step 1: First select the bipolar device to be tested for irradiation at a low dose rate, the low dose rate is 0.001rad / s-0.1rad / s, and the irradiation temperature is -200℃~+50℃. Stop the irradiation when the cumulative dose of irradiation reaches 1 / 10 to 1 / 5 of the total dose of low dose rate irradiation, and record the performance change curve of the device;

[0022] Step 2: Select another bipolar device of the same type to be tested, and irradiate with a high dose rate, the high dose rate is 1 rad / s to 1000 rad / s, and the irradiation temperature is between 0°C and 100°C; When the performance change caused by high-dose irradiation reaches 50%-80% of the performance change de...

specific Embodiment approach 2

[0024] Specific implementation mode two: the following combination figure 2 and Figure 4 Describe this embodiment, the low dose rate enhancement effect acceleration experiment method based on changing temperature and dose rate described in this embodiment, the specific steps of this method are:

[0025] Step 1: first irradiating the bipolar device with a low dose rate of 0.001 rad / s to 0.1 rad / s, and the irradiation temperature is room temperature;

[0026] Step 2: When the dose of low dose rate radiation is greater than or equal to 1×10 4 After rad, switch to a high dose rate to continue irradiating the bipolar device. The high dose rate is 1 rad / s to 1000 rad / s. During high dose rate irradiation, the temperature is lower than -100 degrees. When the dose rate reaches 1 / 10 to 1 / 5 of the total dose, raise the temperature of the device to 100 degrees and keep it for 5 to 10 minutes; then switch to a low dose rate and continue to irradiate the bipolar device. The irradiation ...

specific Embodiment approach 3

[0028] Specific embodiment three: This embodiment further limits the accelerated experimental method of low dose rate enhancement effect based on changing temperature and dose rate described in specific embodiment one or two. In this embodiment, the irradiation source selection 60 Co gamma rays.

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Abstract

The invention relates to the technical field of electronics, in particular to a low-dosage-rate enhancement effect accelerated testing method based on temperature and dosage rate changes. The method aims to solve the problem that due to the fact that the testing time of a low-dosage-rate enhancement test is long, surplus base currents and current gains generate large influence. The low-dosage-rate enhancement effect accelerated testing method is simple in step and easy to operate. The technical approach can greatly lower the time and cost of the low-dosage-rate enhancement effect test, the time and cost are lowered by more than 15 percent on year-on-year basis, necessary bases can be provided for optimizing a bipolar transistor and circuit radiation resisting performance, the influence generated by the surplus base currents and the current gains is reduced, the influence is reduced by 15 percent on year-on-year basis, and the method is of great significance in the low-dosage-rate enhancement effect test and study of an electronic component. The method is suitable for the technical field of the electronics.

Description

technical field [0001] The invention relates to the field of electronic technology. Background technique [0002] In an ionizing radiation environment, the radiation damage of bipolar devices and circuits under low dose rate irradiation is much greater than that under high dose rate conditions, which is the so-called enhanced low dose rate radiation damage effect (ELDRS) . The ELDRS effect commonly exists in electronic components during their service in the space environment, which brings great challenges to the ground radiation simulation test and evaluation method for the radiation resistance of electronic components. If the typical dose rate (10 -4 ~10 -2 rad(Si) / s) to evaluate the radiation resistance of electronic components, the irradiation experiment is time-consuming and expensive. However, at present, ground laboratories actually adopt the radiation standard of 50-300rad(Si) / s according to the US military standard. Due to the existence of the ELDRS effect, this ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00
Inventor 李兴冀杨剑群刘超铭肖景东马国亮何世禹杨德庄
Owner HARBIN INST OF TECH
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