Unlock instant, AI-driven research and patent intelligence for your innovation.

Time-sequence control circuit of static random access memory (SRAM)

A static random access, timing control circuit technology, applied in static memory, digital memory information, information storage and other directions, can solve problems such as reducing stability, and achieve the effect of easy implementation, small area and simple structure

Active Publication Date: 2014-06-25
宁夏储芯科技有限公司
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, speed and stability are mutually restricted. Increasing speed often reduces stability, and enhancing stability needs to be achieved by reducing speed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Time-sequence control circuit of static random access memory (SRAM)
  • Time-sequence control circuit of static random access memory (SRAM)
  • Time-sequence control circuit of static random access memory (SRAM)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] The read and write operations of SRAM depend on the cooperation between each functional module. figure 1 It is a schematic diagram of the overall structure of the existing SRAM, which includes a decoding circuit, a cell array, a sense amplifier and a timing control circuit. The timing control circuit is used to receive external clock signals and control signals, and generate timing control signals required for the internal functional modules to work. The signal 002 is the enabling signal of the pre-charging circuit, which is used to control when the pre-charging circuit is turned on or off. The signal 003 is the enabling signal of the decoding circuit, which is used to control when the decoding circuit is turned o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a time-sequence control circuit of a static random access memory (SRAM). The time-sequence control circuit comprises an amplifier control circuit, a decoding control circuit and a pre-charge control circuit, wherein the pre-charge control circuit comprises a first phase inverter, a second phase inverter, a third phase inverter and a three-input nor gate; the decoding control circuit comprises a fourth phase inverter, a fifth phase inverter, a sixth phase inverter and a first nand gate; the amplifier control circuit comprises a seventh phase inverter, an eighth phase inverter, a ninth phase inverter and a second nand gate. The time-sequence control circuit is simple and effective as well as easy to implement, and has universality in SRAMs with various structures.

Description

technical field [0001] The invention relates to the technical field of embedded memory of semiconductor integrated circuits, in particular to a timing control circuit of a static random access memory (Static Random Access Memory, SRAM). Background technique [0002] The embedded memory is a key module of a current integrated circuit (Integrated Circuit, IC) and an important part of a System-on-Chip (SoC). According to the prediction of the Semiconductor Industry Association (SIA), embedded memory will occupy about 94% of the chip area in SoC by 2014. Therefore, embedded memory will play a decisive role in the performance of SoC in terms of power consumption, speed, stability and integration. Compared with other types of semiconductor memory on the market today, static random access memory (SRAM) has the advantages of low power consumption and fast data storage, and is widely used in high-end fields such as portable consumer electronics and cache. [0003] As a semiconducto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/413
Inventor 曹华敏霍宗亮刘明
Owner 宁夏储芯科技有限公司