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A kind of preparation method of Gan-based white light flip-chip

A flip-chip and white light technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of GaN-based LED flip chips that cannot directly emit white light and growth substrate restrictions, so as to reduce packaging costs, The effect of improving packaging yield

Active Publication Date: 2018-03-09
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is that the GaN-based LED flip chip cannot directly emit white light, and its limitation on the growth substrate

Method used

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  • A kind of preparation method of Gan-based white light flip-chip
  • A kind of preparation method of Gan-based white light flip-chip
  • A kind of preparation method of Gan-based white light flip-chip

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specific Embodiment 1

[0026] Such as Figure 1a As shown, a buffer layer, an n-type GaN layer 102 , an active layer 103 , and a p-type GaN layer 104 are sequentially grown on a silicon substrate 101 by MOCVD to form a GaN-based semiconductor multilayer structure. Such as Figure 1b As shown, an Ag layer 105 is deposited on the surface of the p-type GaN layer 104 as a reflective metal layer. The semiconductor multi-layer structure is etched by an ICP method to expose the n-type GaN layer 102 to form an N electrode hole. An Al / Ti / Au multilayer metal film 106 is evaporated on the surface of the Ag layer 105, and the multilayer metal film 106 is alloyed at 400°C. A layer of dielectric film 107 is deposited on the part surface of the multilayer metal film 106 and the sidewall of the N electrode hole, and a P electrode 108 is prepared on the exposed multilayer metal film 106, then Al is deposited in the N electrode hole and a plurality of The N electrode holes are connected to form an N electrode 109 ...

specific Embodiment 2

[0027] Such as Figure 2a As shown, a buffer layer, an n-type GaN layer 202, an active layer 203, and a p-type GaN layer 204 are sequentially grown on a sapphire substrate 201 by MOCVD to form a GaN-based semiconductor multilayer structure. Such as Figure 2b As shown, an Ag layer 205 is deposited on the surface of the p-type GaN layer 204 as a reflective metal layer. The semiconductor multilayer structure is etched by an ICP method to expose the n-type GaN layer 202 to form an N electrode hole. An Al / Ti / Au multilayer metal film 206 is evaporated on the surface of the Ag layer 205, and the multilayer metal film 206 is alloyed at 400°C. A layer of dielectric film 207 is deposited on the part surface of the multilayer metal film 206 and the sidewall of the N electrode hole, and a P electrode 208 is prepared on the exposed multilayer metal film 206, then Al is deposited in the N electrode hole and a plurality of The N electrode holes are connected to form an N electrode 209 , ...

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Abstract

A method for preparing a GaN-based white-light flip chip not limited by a growth substrate comprises: growing a buffering layer, an n-type GaN layer (102, 202), an active layer (103, 203) and a p-type GaN layer (104, 204) on a growth substrate (101, 201) in sequence, so as to form a GaN-based semiconductor multi-layer structure; preparing a P electrode (108, 208) and an N electrode (109, 209) on the semiconductor multi-layer structure, the P electrode (108, 208) and the N electrode (109, 209) being located at the same side of the semiconductor multi-layer structure and separated by using a nonconducting dielectric film (107，207); coating first adhesive (110, 210) on the semiconductor multi-layer structure, and carrying solidification with a first temporary substrate (111, 211); stripping off the growth substrate (101, 201); coating second adhesive (112, 212) on the exposed surface of the semiconductor multi-layer structure after the stripping, and carrying combination with a permanent support substrate (113, 213); and removing the first temporary substrate (111, 211) and the first adhesive (110, 210), the permanent support substrate (113, 213) is a ceramic or glass transparent substrate doped with phosphor powder. In the method for preparing the GaN-based white light flip chip, a process of transferring the substrate twice is used, the limit of the growth substrate by the GaN-based flip chip is removed, and the semiconductor multi-layer structure is fixed on the transparent permanent support substrate (113, 213) doped with phosphor powder, so as to obtain the GaN-based LED flip chip emitting directly white light, and the packaging cost can be reduced and the packaging yield can be improved.

Description

technical field [0001] The invention relates to a preparation process of a semiconductor light emitting device. More specifically, the present invention relates to a method for preparing a GaN-based white light flip-chip by using two substrate transfer processes. Background technique [0002] Due to its uniform current diffusion and good heat dissipation, the GaN-based LED flip chip can work at a large current density, and its luminous efficiency is basically not affected. In addition, it also has the advantages of simple packaging process, direct eutectic welding packaging, and no need for welding wires. At present, more and more scientific researchers are devoted to the research of LED flip chip, and major LED companies have launched flip chip products one after another. At present, all commercialized GaN-based LED flip-chip products cannot directly emit white light. If they are to be made into chips that emit white light, they need to be coated with phosphor when the ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01L33/48H01L33/50H01L33/00
CPCH01L21/6835H01L2933/0033H01L33/0093H01L33/505H01L2933/0041
Inventor 封波赵汉民孙钱彭翔
Owner LATTICE POWER (JIANGXI) CORP