mim capacitance and its formation method

Abstract

The invention provides an MIM capacitor and a forming method of the MIM capacitor. The forming method of the MIM capacitor includes the steps of firstly, providing a substrate, wherein part of the substrate is located in a first area, and part of the substrate is located in a second area; secondly, forming a first electrode layer on the surface of the part, located in the first area, of the substrate; thirdly, forming an insulating layer on the surface of the first electrode layer and the surface of the substrate; thirdly, forming a second electrode layer on the surface of the insulating layer; fourthly, forming a third medium layer on the surface of the second electrode layer and the surface of the insulating surface; fifthly, simultaneously forming a first through hole and a second through hole, wherein the first though hole sequentially penetrates through the third medium layer, the insulation layer and the first electrode layer of the first area, the second through hole sequentially penetrates through the third medium layer, the second electrode layer and the insulating layer of the second area, and the depth by which the first through hole penetrates through the third medium layer is the same as the depth by which the second through hole penetrates through the third medium layer. According to the forming method of the MIM capacitor, the difficulty in connecting plugs with upper electrodes and low electrodes of the MIM capacitor is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a MIM capacitor and a forming method thereof. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitors include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and MIM (metal-insulator-metal, MIM for short) capacitors. Among them, MIM capacitors provide better electrical characteristics than MOS capacitors and PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. The MIM capacitor can provide better frequency and temperature-related characteristics. [0003] Please refer to figure 1 , is a schematic c...

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Problems solved by technology

[0005] from figure 1 It can be seen from the figure that the depth and position of the plug 22, the plug 21 and the plug 23 are not the same. Large, it is easy to make the through hole forming the plug 22 penetrate the upper electrode 26, and directly connect with the capacitor dielectric layer 25 or the lower electrode 24, thereby making the MIM capacitor invalid

If the through holes are etched separately, it is necessary to increase the process steps and increase the process cost

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