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Schottky Barrier Diodes

A Schottky potential and diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as increased contact resistance and forward voltage

Active Publication Date: 2019-08-20
TAMURA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when the carrier concentration is lowered, the contact resistance with the ohmic electrode layer increases and the forward voltage (VF) increases.

Method used

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Examples

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Embodiment 1

[0059] Next, more specific examples of the present invention will be described.

[0060] In this example, β-Ga 2 o 3 substrate as n + semiconductor layer 32 . In the β-Ga 2 o 3 substrate, doped with Si as a dopant, and formed with an electron carrier concentration of 1×10 19 cm -3 . In addition, the plane direction of the substrate was formed to be (010). Although the plane direction of the substrate is not particularly limited, it is preferably a plane rotated by an angle of 50° to 90° from the (100) plane. For example, there are (010) plane, (001) plane, (−201) plane, (101) plane, and (310) plane. In this way, re-evaporation from the substrate during epitaxial growth can be suppressed, and the growth rate can be increased. In addition, it may be a surface obtained by rotating the direction of the substrate surface by an angle of 37.5° or less from the (010) plane. In this case, it is possible to make n + Semiconductor layer 32 and n - The interface of the semico...

Deformed example 1

[0071] Figure 6A as well as Figure 6B A Schottky diode 1A showing a first modified example of the embodiment of the present invention, in which Figure 6A is a top view, Figure 6B yes Figure 6A A-A cutaway view.

[0072] The Schottky diode 1A has a quadrangular shape in plan view, and a Schottky electrode layer 2 having a similar quadrangular shape is formed at the center thereof. In addition, the Schottky diode 1A includes an n-type semiconductor layer 3, and the n-type semiconductor layer 3 has an n-type semiconductor layer with a low electron carrier concentration. - The semiconductor layer 31, and having a ratio of the n - The n of the high electron carrier concentration of the high electron carrier concentration of the semiconductor layer 31 + semiconductor layer 32 . n for low electron carrier concentration - The semiconductor layer 31 is formed on the side of the n-type semiconductor layer 3 that is in Schottky contact with the Schottky electrode layer 2 . ...

Deformed example 2

[0077] Figure 7A as well as Figure 7B A Schottky diode 1B showing a second modified example of the embodiment of the present invention, in which Figure 7A is a top view, Figure 7B yes Figure 7A A-A cutaway view.

[0078] For Schottky diode 1B, at n - The structure in which the resistive layer 310 is formed on a part of the semiconductor layer 31 is different from the Schottky diode 1A, and the other structures are the same as the Schottky diode 1A. from n - The resistive layer 310 is formed on the upper surface 31 a side of the semiconductor layer 31 from the portion in contact with the peripheral portion of the Schottky electrode layer 2 to the side surface 31 b. The resistive layer 310 at n + Formed on the semiconductor layer 32 are n -Afterwards, the semiconductor layer 31 can be formed, for example, by annealing in an oxygen atmosphere. In addition, this region may be formed as a P-type layer instead of the resistance layer 310 .

[0079] According to the Sc...

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Abstract

The present invention provides a Schottky barrier diode capable of suppressing an increase in forward voltage and an increase in contact resistance with an ohmic electrode layer even if the reverse breakdown voltage is increased. The Schottky barrier diode (1) has: an n-type semiconductor layer (3), which is composed of an n-type conductive Ga2O3 compound semiconductor; and a Schottky electrode layer (2), which is connected with the n-type semiconductor layer (3) Schottky contact, the n-type semiconductor layer (3) is formed with a relatively low electron carrier concentration in the Schottky electrode layer (2) Schottky contact. ‑ The semiconductor layer (31), and having ratio n ‑ n of the high electron carrier concentration of the semiconductor layer (31) + Semiconducting layer (32).

Description

technical field [0001] The present invention relates to a Schottky barrier diode formed by contacting metal and semiconductor Schottky. Background technique [0002] Conventionally, a Schottky barrier diode using SiC is known as a high withstand voltage diode used, for example, in an inverter circuit (for example, refer to Patent Document 1). Schottky barrier diodes generally have a lower forward voltage (VF) and a shorter reverse recovery time (trr) than PN junction diodes with the same current capacity, and have excellent switching characteristics. However, people are eagerly pursuing higher withstand voltage and higher efficiency, and therefore seek further higher withstand voltage and lower forward voltage. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2006-253521 [0004] Generally, in Schottky barrier diodes, there is a relationship between the forward voltage (VF) and the reverse withstand voltage (VRM) when a reverse bias voltage is applied. This is be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/47H01L29/872
CPCH01L21/02414H01L21/02433H01L21/02565H01L21/02576H01L21/02631H01L29/0619H01L29/0661H01L29/24H01L29/47H01L29/66969H01L29/872H01L29/045H01L29/267
Inventor 泷沢胜仓又朗人
Owner TAMURA KK
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