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Polishing pad and method for producing same

A manufacturing method and technology of grinding pads, which are applied in the direction of grinding tools, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as clogging, and achieve the effects of suppressing excessive extrusion, suppressing excessive tracking, and excellent grinding uniformity

Active Publication Date: 2014-07-16
FUJIBO HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there is still the problem that it is easy to cause clogging

Method used

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  • Polishing pad and method for producing same
  • Polishing pad and method for producing same
  • Polishing pad and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0183] Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to these examples.

[0184] In each Example, a comparative example, and Tables 1 to 2, unless otherwise specified, "parts" means "parts by mass". In addition, the value of EXPANCEL551DE shows the mass % with respect to the total 100 mass % of all solid content, ie (B) component, (C-1) component, ((C-2) component), and (D) component.

[0185] In addition, each abbreviation code|symbol of Table 1 - Table 2 shows the following meaning.

[0186] 2,4-TDI: 2,4-toluene diisocyanate

[0187] ·Hydrogenated MDI: 4,4'-methylene-bis(cyclohexyl isocyanate)

[0188] ・PTMG1000: Polytetramethylene glycol with a number average molecular weight of about 1000

[0189] DEG: diethylene glycol

[0190] MOCA: 3,3'-dichloro-4,4'-diaminodiphenylmethane

[0191] Trifunctional PPG3000: Trifunctional polypropylene glycol with a number average molecular weight of 3000

[0192] In additio...

Embodiment 1

[0199] In Example 1, as the first component of the prepolymer, 2,4-TDI (286 parts) and PTMG (714 parts) with a number average molecular weight of about 1000 were used. The isocyanate content was 7.8%, and the NCO equivalent 540 isocyanate urethane prepolymer, in which 100% by mass relative to the total of all solid components, that is, (B) component, (C-1) component, (C-2) component, and (D) component % to 4% by mass, 51 parts of micro hollow spheres (EXPANCEL551DE) were added and mixed, heated to 55° C. and defoamed under reduced pressure. Using solid MOCA (220 parts) as the chain extender of the second component, it was melted at 120° C. and defoamed under reduced pressure. 50 parts of trifunctional PPG was used as a 3rd component, and it defoamed under reduced pressure. The first component: the second component: the third component was supplied to the mixer at a ratio of 1051 parts by weight: 220 parts: 50 parts. The obtained mixed solution was casted in a mold frame of 8...

Embodiment 2～ Embodiment 3 and comparative example 1～ comparative example 4

[0201] Various polishing pads were produced by the same method as in Example 1 except that the ratio of the micro hollow spheres was changed to that shown in Table 1.

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Abstract

Provided are: a polishing pad, which improves the problem of scratches that are produced in cases where conventional hard (dry) polishing pads are used, which has having excellent polishing rate and polishing uniformity, and which is applicable not only to primary polishing but also to final polishing; and a method for producing the polishing pad. A polishing pad for semiconductor device polishing, which comprises a polishing layer having a polyurethane polyurea resin molded body that contains generally spherical cells. This polishing pad for semiconductor device polishing is characterized in that: the polyurethane polyurea resin molded body has a closed cell ratio of 60-98%; the ratio of the loss modulus (E") to the storage modulus (E'), namely loss modulus / storage modulus (tan delta) of the polyurethane polyurea resin molded body is 0.15-0.30; the storage modulus (E') is 1-100 MPa; and the polyurethane polyurea resin molded body has a density (D) of 0.4-0.8 g / cm<3>.

Description

technical field [0001] The invention relates to a grinding pad and a manufacturing method thereof. In particular, it relates to a polishing pad for chemical mechanical polishing (CMP) of a semiconductor device and a manufacturing method thereof. Background technique [0002] Since the surfaces of materials such as silicon, hard disks, mother glasses for liquid crystal displays, and semiconductor devices require flatness, they are polished using a free abrasive grain method using a polishing pad. The free abrasive method is a method of polishing the processed surface of the object to be polished while supplying slurry (polishing liquid) containing abrasive particles between the polishing pad and the non-abrasive object. [0003] A polishing pad for a semiconductor device requires the surface of the polishing pad to maintain openings of abrasive grains, hardness to maintain the flatness of the surface of the semiconductor device, and elasticity to prevent scratches on the sur...

Claims

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Application Information

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IPC IPC(8): H01L21/304B24B37/20B24B37/24C08G18/32
CPCB24B37/24C08G18/10C08G18/3206C08G18/3814C08G18/4854C08G18/7621H01L21/31053C08K2201/005C08G2101/00C08G2110/0066C08G18/6685
Inventor 糸山光纪宫泽文雄
Owner FUJIBO HLDG
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