Catalyst for synthesis of vinyl acetate by acetylene method and synthetic method of vinyl acetate
A vinyl acetate and catalyst technology, which is applied in the field of acetylene gas phase vinyl acetate catalyst, can solve the problem of low catalyst activity, achieve the effects of improving catalyst activity, improving electronic structure, and good technical effects
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[0028] [Example 1]
[0029] (1) Preparation of carbon deposition silicon carbide carrier
[0030] (A) Choose BET specific surface area, pore volume and particle size to be 35 m respectively 2 / g、0.33cm 3 / g and 650μm silicon carbide particles as the base, the mixture of ethane and argon (the molar ratio of ethane to argon = 1:9) at 850℃, 1.2 atm and carbon source volumetric space velocity 150 h -1 Under the reaction conditions, the carrier precursor A is obtained through 100 g of the above silicon carbide particles for 3 h;
[0031] (B) The carrier precursor A is calcined in an air atmosphere at a temperature of 400 ℃ for 2 h to obtain the carrier precursor B;
[0032] (C) At 120℃, immerse 200 ml of carrier precursor B in an aqueous solution of nitric acid with a mass concentration of 60% for 6 h to obtain carrier precursor C;
[0033] (D) Take 15.0 g of polyvinyl alcohol (polymerization degree is 1700, alcoholysis degree is 88%), add it to 85.0 g of boiling pure water, and stir to obta...
Example Embodiment
[0051] [Example 2] to [Example 6]
[0052] Except for changing the carbon source during the preparation process of the carbon deposition silicon carbide support, other support preparation, catalyst preparation process and catalyst evaluation conditions are the same as in Example 1. To facilitate comparison, the preparation conditions and characterization of the support and the catalyst are listed in Table 1, and the catalyst evaluation conditions and results are listed in Table 2.
Example Embodiment
[0053] [Example 7]
[0054] (1) Preparation of carbon deposition silicon carbide carrier
[0055] (A) Choose BET specific surface area, pore volume and particle size to be 35 m respectively 2 / g、0.33cm 3 / g and 650μm silicon carbide particles as the substrate, the CCl 4 , Acetylene and argon gas mixture (CCl 4 , Acetylene and Argon Gas molar ratio=1:1:18) at 850℃, 1.2 atm and carbon source volumetric space velocity 150 h -1 Under the reaction conditions, the carrier precursor A is obtained through 100 g of the above silicon carbide particles for 3 h;
[0056] (B) The carrier precursor A is calcined in an air atmosphere at a temperature of 400 ℃ for 2 h to obtain the carrier precursor B;
[0057] (C) At 120℃, immerse 200 ml of carrier precursor B in an aqueous solution of nitric acid with a mass concentration of 60% for 6 h to obtain carrier precursor C;
[0058] (D) Take 15.0 g of polyvinyl alcohol (polymerization degree is 1700, alcoholysis degree is 88%), add it to 85.0 g of boiling p...
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