Bi-axial MEMS in-plane high-g sensor based on micro beam detection structure

A detection structure and sensor technology, applied in the field of MEMS sensors, can solve the problems of difficult horizontal acceleration measurement, complex structure of acceleration sensor, low sensitivity, etc., and achieve the effect of good anti-high overload capacity, good sensitivity, and simple processing technology

Inactive Publication Date: 2014-08-20
ZHONGBEI UNIV
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Problems solved by technology

Based on this, it is necessary to design a brand-new acceleration sensor to solve the problems of existing acceleration sensors such as com...

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  • Bi-axial MEMS in-plane high-g sensor based on micro beam detection structure
  • Bi-axial MEMS in-plane high-g sensor based on micro beam detection structure

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Embodiment Construction

[0016] Such as figure 1 As shown, a kind of biaxial MEMS in-plane high-g sensor based on the micro-beam detection structure provided by the present invention includes a silicon-based support frame and four sensitive structures, and the silicon-based support frame includes a silicon-based frame 13 and is fixedly connected to the silicon-based Anchor block 14 at the center of the surface of frame 13; four sensitive structures are X-1 sensitive structure 1, X-2 sensitive structure 2, Y-1 sensitive structure 3, and Y-2 sensitive structure 4, which are evenly distributed in the center of the anchor block Around, X-1 sensitive structure 1 and X-2 sensitive structure 2 are in the X-axis direction, Y-1 sensitive structure 3 and Y-2 sensitive structure 4 are in the Y-axis direction.

[0017] figure 2 It is a schematic diagram of the X-2 sensitive structure, which is the same as other sensitive structures. Any sensitive structure includes a proof mass 18 and four cantilever beams. The...

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Abstract

The invention relates to a bi-axial MEMS in-plane high-g sensor based on a micro beam detection structure. By means of the bi-axial MEMS in-plane high-g sensor, acceleration measurement in the horizontal direction can be achieved. The bi-axial MEMS in-plane high-g sensor comprises a silica-based supporting frame and four sensitive structures, wherein the silica-based supporting frame comprises a silica-based frame and a central anchor block fixedly connected to the surface of the silica-based frame, the four sensitive structures are evenly distributed around the central anchor block, and every four voltage dependent resistors in the same axial direction form a Wheatstone full bridge. Detection can be carried out in the X direction and the Y direction through two different units respectively, namely, two independent detection units in the X direction and the Y direction, and therefore measurement of high-g acceleration signals in the horizontal plane can be achieved. The bi-axial MEMS in-plane high-g sensor is reasonable and simple in structure, low in transverse sensitivity, easy to integrate, good in sensitivity and overload resistance and suitable for measuring the high-g impact acceleration, and the machining process is simple.

Description

technical field [0001] The invention relates to a MEMS sensor, in particular to a biaxial MEMS in-plane high-g sensor based on a micro-beam detection structure. Background technique [0002] Existing MEMS high-g acceleration sensors have been widely used in industrial automatic control, automobiles, aerospace, military systems, medicine and biological engineering and other fields. Various technical performance indicators of the sensor are also very important, such as range range, resonant frequency, static and dynamic sensitivity, linearity, lateral percentage and more than a dozen performance indicators, which are generally easy to meet the technical requirements of the design, but the lateral sensitivity is difficult to achieve Require. Due to the design and processing technology of the piezoresistive silicon micro-accelerometer, there will always be a high lateral sensitivity. For the in-plane accelerometer, the lateral sensitivity is a more prominent problem. Based on ...

Claims

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Application Information

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IPC IPC(8): G01P15/12G01P15/18
Inventor 刘俊石云波唐军马宗敏郭涛李祥李策陈艳香杨志才
Owner ZHONGBEI UNIV
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