Bi-axial MEMS in-plane high-g sensor based on micro beam detection structure

Abstract

The invention relates to a bi-axial MEMS in-plane high-g sensor based on a micro beam detection structure. By means of the bi-axial MEMS in-plane high-g sensor, acceleration measurement in the horizontal direction can be achieved. The bi-axial MEMS in-plane high-g sensor comprises a silica-based supporting frame and four sensitive structures, wherein the silica-based supporting frame comprises a silica-based frame and a central anchor block fixedly connected to the surface of the silica-based frame, the four sensitive structures are evenly distributed around the central anchor block, and every four voltage dependent resistors in the same axial direction form a Wheatstone full bridge. Detection can be carried out in the X direction and the Y direction through two different units respectively, namely, two independent detection units in the X direction and the Y direction, and therefore measurement of high-g acceleration signals in the horizontal plane can be achieved. The bi-axial MEMS in-plane high-g sensor is reasonable and simple in structure, low in transverse sensitivity, easy to integrate, good in sensitivity and overload resistance and suitable for measuring the high-g impact acceleration, and the machining process is simple.

Description

technical field [0001] The invention relates to a MEMS sensor, in particular to a biaxial MEMS in-plane high-g sensor based on a micro-beam detection structure. Background technique [0002] Existing MEMS high-g acceleration sensors have been widely used in industrial automatic control, automobiles, aerospace, military systems, medicine and biological engineering and other fields. Various technical performance indicators of the sensor are also very important, such as range range, resonant frequency, static and dynamic sensitivity, linearity, lateral percentage and more than a dozen performance indicators, which are generally easy to meet the technical requirements of the design, but the lateral sensitivity is difficult to achieve Require. Due to the design and processing technology of the piezoresistive silicon micro-accelerometer, there will always be a high lateral sensitivity. For the in-plane accelerometer, the lateral sensitivity is a more prominent problem. Based on ...

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Problems solved by technology

Based on this, it is necessary to design a brand-new acceleration sensor to solve the problems of existing acceleration sensors such as complex structure, low integration, large lateral effect, difficulty in realizing horizontal acceleration measurement, low range or low sensitivity.

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