Focusing ring for aluminum etching process and aluminum etching process

Abstract

The invention provides a focusing ring for the aluminum etching process. The inner diameter lateral wall and the inner diameter bottom edge of the focusing ring are respectively provided with a material layer capable of absorbing a small amount of etching gas, and the concentration of plasmas at the edges of wafers is accordingly reduced; furthermore, the size of the inner diameter of the focusing ring is reduced, so that the distances between the edges of the wafers and the inner diameters of the focusing ring in the aluminum etching process are decreased, the concentration of the plasmas at the edges of the wafers is reduced, deposition of polymer at the edges, in particular to the back faces of the edges, of the wafers is accordingly and greatly reduced, peeling of the polymer at the edges of the wafers is reduced, and the quality and the yield of a device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a focus ring for an aluminum etching process and an aluminum etching process using the focus ring. Background technique [0002] In the field of semiconductor manufacturing, the etching process is one of the important technologies. Etching is the process of selectively removing unwanted material from the surface of a silicon wafer using chemical or physical methods. Classified from the process, etching can be divided into wet etching and dry etching. The main feature of the former is isotropy, while the latter uses plasma for anisotropic etching, which can strictly control the vertical and horizontal etching process. At present, metal aluminum is still widely used in memories such as DRAM and Flash, as well as various logic products, as an internal interconnection line and bonding block material. [0003] see figure 1 , figure 1 A scanning electron microscope picture ...

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Problems solved by technology

For example, reducing the distance between the edge of the wafer and the inner diameter of

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