Glassivation diode chip and manufacturing method thereof
A glass passivation and manufacturing method technology, applied in the field of diodes, can solve the problems of easy debris, lower product qualification rate, and easily damaged chips, etc., to achieve the effects of reducing product reliability, improving cutting efficiency, and improving product qualification rate
Inactive Publication Date: 2014-08-27
ANHUI XINXU SEMICON
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Problems solved by technology
[0003] Existing methods for making GPP diode chips mostly use knife-scratch glass coating, that is, use a scraper to coat glass in the groove of the substrate. Although the process is simple, a thick glass layer will be left at the bottom of the groove. Subsequent cutting of the substrate not only easily damages the chip, but also tends to cause fragments, which reduces the product qualification rate
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[0031] As mentioned in the background technology, when making GPP diode chips, a thick glass layer will be left at the bottom of the groove. When the substrate is cut later, not only the chips are easily damaged, but also fragments are prone to occur, which reduces the quality of the product. Pass rate.
[0032] Based on this, the present invention provides a method for manufacturing a glass passivated diode chip to overcome the above-mentioned problems in the prior art, including:
[0033] providing a PN junction substrate etched with a first trench, the first trench forming the PN junction substrate with at least one mesa;
[0034] forming a glass passivation layer in the first trench, the glass passivation layer being flush with the mesa;
[0035] Expose and develop through a photolithography process, and etch the central area of the glass passivation layer under the conditions of a set ratio of hydrochloric acid and hydrofluoric acid solution, a preset time and a preset...
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The invention discloses a glassivation diode chip and a manufacturing method of the glassivation diode chip. The manufacturing method includes the steps of providing a PN junction substrate, wherein the PN junction substrate comprises a first groove, and at least one tabletop is formed on the PN junction substrate due to the first groove; forming a glassivation layer in the first groove, wherein the glassivation layer is flush with the tabletop; conducting exposure and developing through the photolithographic process, and conducting etching on the central area of the glassivation layer so as to form a second groove penetrating through the glassivation layer; forming an electrode on the PN junction substrate, and conducting cutting along the second groove to obtain at least one glassivation diode chip. The second groove is formed by etching the glassivation layer, and therefore the situation that glass is reserved at the bottom of the second groove is avoided, and cutting efficiency is further improved. According to the glassivation diode chip, no annular glass is arranged on the edge area of the tabletop, sealing structural stress produced when the annular glass makes contact with a metal lead in the packaging welding process is avoided, and therefore the situation that product reliability is lowered is avoided.
Description
technical field [0001] The invention relates to the technical field of diodes, in particular to a glass passivated diode chip and a manufacturing method thereof. Background technique [0002] The existing GPP (Glassivation passivation parts, glass passivation device) diode chip is to burn a layer of glass around the PN junction of the common diode chip. Because glass and single crystal silicon have good nodule properties, the PN junction Better protection can be obtained from the intrusion of the external environment, and the stability of the device can be improved. [0003] Existing methods for making GPP diode chips mostly use knife-scratch glass coating, that is, use a scraper to coat glass in the groove of the substrate. Although the process is simple, a thick glass layer will be left at the bottom of the groove. When the substrate is subsequently cut, not only is it easy to damage the chip, but it is also prone to fragmentation, which reduces the product qualification ...
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IPC IPC(8): H01L21/329H01L29/861
CPCH01L29/6609H01L29/8613
Inventor 李建利黄亚发
Owner ANHUI XINXU SEMICON