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Area Photonic Crystal Light Emitting Diode Devices

A technology of light-emitting diodes and photonic crystals, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of damage to the active area of ​​the device, weakening of the ohmic contact characteristics of the p-type gallium nitride layer and metal, and high forward voltage. Improve the light extraction efficiency, the light guiding effect is remarkable, and the effect of reducing the ohmic contact resistance

Active Publication Date: 2016-08-24
HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of a photonic crystal structure in the entire area will lead to a high forward voltage, thus weakening the ohmic contact characteristics between the p-type gallium nitride layer and the metal, and the etching process in the entire area may also cause damage to the active area of ​​the device

Method used

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  • Area Photonic Crystal Light Emitting Diode Devices
  • Area Photonic Crystal Light Emitting Diode Devices
  • Area Photonic Crystal Light Emitting Diode Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0018] see attached figure 1 As shown, the area photonic crystal light emitting diode device in this embodiment includes a substrate 7, an n-type GaN layer 6 disposed on the substrate 7, an n-type electrode 5 disposed on the n-type GaN layer 6, and a quantum well to emit light layer 8, a p-type GaN layer 9 provided on the quantum well light-emitting layer 8, a transparent conductive layer 4 provided on the GaN layer 9, and a p-type electrode 1 provided on the transparent conductive layer 4. A reflective photonic crystal structure 2 for reflecting incident light and a transmissive photonic crystal structure 3 for transmitting incident light are fabricated on the transparent conductive layer 4, wherein the reflective photonic crystal structure 2 is located at the bottom of the p-type electrode 1, and the transmissive photonic crystal structure 2 is located at the bottom of the p-type electrode 1. Structure 3 is located around the bottom of p-type electrode 1 .

[0019] Reflecti...

Embodiment example 2

[0022] see attached image 3 As shown, the structure similar to the above-mentioned example 1, the difference is that the reflective photonic crystal structure 2 and the transmission photonic crystal structure 3 are arranged in a triangular lattice on the transparent conductive layer 4, and the lattice spacing ranges from 100 to 600 nm. The triangular lattice fabrication process is relatively simple, and is the main form of photonic crystals currently prepared or integrated on conventional GaN-based LED devices.

Embodiment example 3

[0024] see attached Figure 4 As shown, the structure is similar to that in the above-mentioned implementation case 1. The difference is that the reflective photonic crystal structure 2 and the transmission photonic crystal structure 3 are arranged in a honeycomb lattice on the transparent conductive layer 4, and the lattice spacing ranges from 100 to 600 nm. The lattice has better heat dissipation performance.

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Abstract

The invention relates to a regional photonic crystal light emitting diode structure. The light emitting diode structure comprises a substrate, an n type GaN layer, a quantum well light emitting layer, a p type GaN layer and a transparent conducting layer from bottom to top in sequence. An n type electrode is arranged on the n type GaN layer, and a p type electrode is arranged on the transparent conducting layer. A reflection photonic crystal structure is manufactured below the p type electrode, and a transmission photonic crystal structure is manufactured near the p type electrode. The ohmic contact resistance of an epitaxial layer can be effectively reduced through the regional photonic crystal structure etched near the metal electrode, the damage to an active region due to full area etching is further reduced, and the light guiding function of the photonic crystal can be more obvious. By means of the structure, the light irradiating the position around the metal electrode can be totally reflected and transmitted out of a chip, an electricity channel and a light channel are isolated, and therefore the light emitting efficiency of an LED is obviously improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronic device manufacturing. Background technique [0002] In the prior art, photonic crystal technology is usually used to improve the light extraction efficiency of LEDs, which is achieved by etching holes with periodic or quasi-periodic distribution in the entire surface layer of the chip. However, the introduction of the photonic crystal structure in the whole area will lead to a high forward voltage, thus weakening the ohmic contact between the p-type gallium nitride layer and the metal, and the etching process in the whole area may also cause damage to the active area of ​​the device. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to provide an area photonic crystal light emitting diode device based on the existing PSS pattern, so as to obtain better light extraction efficiency and further reduce the cost. [0004] In order to achieve the a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10
CPCH01L33/10H01L33/22
Inventor 王璨璨孙智江
Owner HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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