Photonic crystal LED (Light Emitting Diode) structure with gradually-varied refractive index

Abstract

The invention provides a photonic crystal LED (Light Emitting Diode) structure with a gradually-varied refractive index. The photonic crystal LED structure comprises a substrate, a nucleating layer, a buffering layer, an n-type contact layer, an active luminescent layer, a p-type electron blocking layer, a p-type contact layer, a refractive index gradual variation array type photonic crystal, a negative electrode and a positive electrode, wherein the nucleating layer is manufactured on the substrate; the buffering layer is manufactured on the nucleating layer; the n-type contact layer is manufactured on the buffering layer and a mesa is formed at one side of the n-type contact layer; the active luminescent layer is manufactured on the other side of the mesa of the n-type contact layer; the p-type electron blocking layer is manufactured on the active luminescent layer; the p-type contact layer is manufactured on the p-type electron blocking layer; the refractive index gradual variation array type photonic crystal is manufactured on the p-type contact layer; the negative electrode is manufactured on the mesa at one side of the n-type contact layer; and the positive electrode is manufactured on the refractive index gradual variation array type photonic crystal.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photonic crystal light-emitting diode structure with a graded refractive index. Background technique [0002] At present, III-V semiconductor optoelectronic materials are known as the third generation semiconductor materials. Gallium nitride-based light-emitting diodes have become the focus of research in the industry because light-emitting diodes (referred to as "LEDs") of various colors (especially blue or violet light that require a high energy gap) can be produced by controlling the composition of materials. [0003] In addition to the internal quantum efficiency, the factors affecting LED luminescence, the light extraction efficiency also largely affects the luminous efficiency of LEDs. The light extraction efficiency of GaN-based LEDs is mainly affected by the refractive index of GaN materials. Taking the output light at 460 nanometers as an example, the effectiv...

AI Technical Summary

Problems solved by technology

Most of the current photonic crystals are made on the surface of the material with a single structure, and the photonic band gap and grating diffraction effect at the interface are bound to be accompanied by energy loss.

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